IRFU214 Vishay, IRFU214 Datasheet

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IRFU214

Manufacturer Part Number
IRFU214
Description
MOSFET N-CH 250V 2.2A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU214

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.2 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFU214

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 Material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91269
S10-1122-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(TO-252)
D
(Max.) (nC)
(nC)
(V)
(nC)
DPAK
≤ 2.2 A, dI/dt ≤ 65 A/μs, V
= 50 V, Starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 62 mH, R
G
c
a
a
D S
DD
b
V
≤ V
GS
e
DPAK (TO-252)
SiHFR214-GE3
IRFR214PbF
SiHFR214-E3
IRFR214
SiHFR214
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
250
8.2
1.8
4.5
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
DPAK (TO-252)
SiHFR214TRL-GE3
IRFR214TRLPbF
SiHFR214TL-E3
-
-
IRFR214, IRFU214, SiHFR214, SiHFU214
2.0
GS
AS
at 10 V
= 2.2 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
a
a
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210, SiHFR9210)
• Straight Lead (IRFU9210, SiHFU9210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
DPAK (TO-252)
SiHFR214TR-GE3
IRFR214TRPbF
SiHFR214T-E3
IRFR214TR
SiHFR214T
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
P
device
DM
I
a
a
AR
GS
DS
AS
AR
D
D
D
stg
a
a
DPAK (TO-252)
SiHFR214TRR-GE3
-
-
IRFR214TRR
SiHFR214TR
design,
- 55 to + 150
LIMIT
0.020
260
± 20
0.20
250
190
2.2
1.4
8.8
2.2
2.5
2.5
4.8
25
low
a
a
Vishay Siliconix
d
on-resistance
IPAK (TO-251)
SiHFU214-GE3
IRFU214PbF
SiHFU214-E3
IRFU214
SiHFU214
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
W
V
A
A
and
1

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IRFU214 Summary of contents

Page 1

... DS d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 Material containing terminations are not RoHS compliant, exemptions may apply Document Number: 91269 S10-1122-Rev. C, 10-May-10 IRFR214, IRFU214, SiHFR214, SiHFU214 Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 250 Definition • Dynamic dV/dt Rating 2.0 • ...

Page 2

... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91269 S10-1122-Rev. C, 10-May-10 IRFR214, IRFU214, SiHFR214, SiHFU214 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91269 S10-1122-Rev. C, 10-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91269 S10-1122-Rev. C, 10-May-10 IRFR214, IRFU214, SiHFR214, SiHFU214 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91269. Document Number: 91269 S10-1122-Rev. C, 10-May-10 IRFR214, IRFU214, SiHFR214, SiHFU214 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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