IRL520 Vishay, IRL520 Datasheet
IRL520
Specifications of IRL520
Available stocks
Related parts for IRL520
IRL520 Summary of contents
Page 1
... C SYMBOL ° 5 100 ° °C C dV/dt T for screw = 25 Ω 9.2 A (see fig. 12 ≤ 175 °C. J This datasheet is subject to change without notice. IRL520, SiHL520 Vishay Siliconix RoHS* COMPLIANT = 4 V and device design, low on-resistance LIMIT UNIT V 100 ± 9 6 ...
Page 2
... IRL520, SiHL520 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greasd Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... Document Number: 91298 S11-0518-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRL520, SiHL520 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...
Page 4
... IRL520, SiHL520 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91298 S11-0518-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRL520, SiHL520 Vishay Siliconix D.U. ...
Page 6
... IRL520, SiHL520 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 7
... D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level device Fig For N-Channel This datasheet is subject to change without notice. IRL520, SiHL520 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...