IS62WV12816 ISSI, IS62WV12816 Datasheet

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IS62WV12816

Manufacturer Part Number
IS62WV12816
Description
128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
Manufacturer
ISSI
Datasheet

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IS62WV12816ALL
IS62WV12816BLL
128K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 45ns, 55ns, 70ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
• Fully static operation: no clock or refresh
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• 2CS Option Available
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
06/08/05
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
– 1.65V--2.2V V
– 2.5V--3.6V V
required
DD
DD
(62WV12816BLL)
(62WV12816ALL)
Lower Byte
Upper Byte
I/O8-I/O15
I/O0-I/O7
A0-A16
VDD
GND
CS2
CS1
WE
OE
UB
LB
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
speed, 2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS62WV12816ALL and IS62WV12816BLL are packaged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
ISSI
MEMORY ARRAY
COLUMN I/O
IS62WV12816ALL/ IS62WV12816BLL are high-
128K x 16
ISSI
's high-performance CMOS
ISSI
JUNE 2005
®
1

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IS62WV12816 Summary of contents

Page 1

... Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV12816ALL and IS62WV12816BLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II). A0-A16 ...

Page 2

... IS62WV12816ALL, IS62WV12816BLL PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm) (Package Code CSI I I GND I I I/O NC A16 I I/O I/O A14 A15 I A12 WE I/O NC A13 A10 ...

Page 3

... ISSI I/O PIN I/O8-I/O15 V Current DD High-Z High High-Z High High-Z High High-Z High High-Z High High-Z I OUT CC High-Z D OUT D D OUT OUT D High High Unit +0 °C 1.0 W IS62WV12816BLL 2.5V - 3.6V 2.5V - 3.6V ® ...

Page 4

... IS62WV12816ALL, IS62WV12816BLL DC ELECTRICAL CHARACTERISTICS Symbol Parameter V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH IL (1) V Input LOW Voltage I Input Leakage LI I Output Leakage LO Notes (min.) = –1.0V for pulse width less than 10 ns. IL CAPACITANCE (1) Symbol Parameter C Input Capacitance ...

Page 5

... Inputs) V CS1 = ULB Control V CS1 = V I CMOS Standby CS1 V Current (CMOS Inputs) CS2 0.2V ULB Control V V IS62WV12816BLL, POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I V Dynamic Operating Supply Current I I Operating Supply Current I I TTL Standby Current ...

Page 6

... IS62WV12816ALL, IS62WV12816BLL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load 1.65-2.2V R1( 3070 R2( 3150 V 0.9V REF V 1. TEST LOADS R1 VTM OUTPUT 30 pF Including jig and scope Figure 1 6 62WV12816ALL (Unit) 0. -0. ...

Page 7

... IS62WV12816ALL, IS62WV12816BLL READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CS1/CS2 Access Time t t ACS1/ ACS2 OE Access Time t DOE OE to High-Z Output t (2) HZOE OE to Low-Z Output t (2) LZOE CS1/CS2 to High-Z Output ...

Page 8

... IS62WV12816ALL, IS62WV12816BLL AC WAVEFORMS (Address Controlled) (CS1 = READ CYCLE NO. 1 (1,2) ADDRESS D OUT PREVIOUS DATA VALID AC WAVEFORMS (1,3) (CS1, CS2, OE, AND UB/LB Controlled) READ CYCLE NO. 2 ADDRESS OE CS1 CS2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1, UB Address is valid prior to or coincident with CS1 LOW transition. ...

Page 9

... IS62WV12816ALL, IS62WV12816BLL WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time WC CS1/CS2 to Write End t t SCS1/ SCS2 t Address Setup Time to Write End AW t Address Hold from Write End HA t Address Setup Time SA LB, UB Valid to End of Write t PWB WE Pulse Width t PWE t Data Setup to Write End ...

Page 10

... IS62WV12816ALL, IS62WV12816BLL AC WAVEFORMS (1,2) (CS1 Controlled HIGH or LOW) WRITE CYCLE NO. 1 ADDRESS CS1 CS2 WE LB, UB DOUT DIN Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 , CS2 and WE inputs and at least one of the LB and UB inputs being in the LOW state. ...

Page 11

... IS62WV12816ALL, IS62WV12816BLL AC WAVEFORMS (WE Controlled HIGH During Write Cycle) WRITE CYCLE NO. 2 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN Integrated Silicon Solution, Inc. — www.issi.com — Rev. E 06/08/ SCS1 t SCS2 PWE HZWE HIGH-Z DATA UNDEFINED t SD 1-800-379-4774 ISSI t HA ...

Page 12

... IS62WV12816ALL, IS62WV12816BLL AC WAVEFORMS (WE Controlled LOW During Write Cycle) WRITE CYCLE NO. 3 ADDRESS OE CS1 CS2 WE LB, UB DOUT DIN SCS1 t SCS2 PWE HZWE HIGH-Z DATA UNDEFINED t SD Integrated Silicon Solution, Inc. — www.issi.com — ISSI LZWE t HD DATA-IN VALID ® ...

Page 13

... IS62WV12816ALL, IS62WV12816BLL AC WAVEFORMS WRITE CYCLE NO. 4 (UB/LB Controlled) ADDRESS OE LOW CS1 HIGH CS2 WE UB HZWE D OUT DATA UNDEFINED D IN Integrated Silicon Solution, Inc. — www.issi.com — Rev. E 06/08/ ADDRESS 1 ADDRESS PBW WORD 1 HIGH ...

Page 14

... IS62WV12816ALL, IS62WV12816BLL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current DR t Data Retention Setup Time SDR t Recovery Time RDR DATA RETENTION WAVEFORM VDD V DR CS1 GND DATA RETENTION WAVEFORM VDD CS2 V DR GND 14 Test Condition See Data Retention Waveform = 1 ...

Page 15

... IS62WV12816ALL, IS62WV12816BLL ORDERING INFORMATION: IS62WV12816ALL (1.65V - 2.2V) Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 70 IS62WV12816ALL-70T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 70 IS62WV12816ALL-70TI 70 IS62WV12816ALL-70BI 70 IS62WV12816ALL-70B2I ORDERING INFORMATION: IS62WV12816BLL (2.5V - 3.6V) Commercial Range: 0°C to +70°C Speed (ns) Order Part No. ...

Page 16

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

Page 17

... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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