IS62C1024AL-35QLI ISSI, Integrated Silicon Solution Inc, IS62C1024AL-35QLI Datasheet

IC SRAM 1MBIT 35NS 32SOP

IS62C1024AL-35QLI

Manufacturer Part Number
IS62C1024AL-35QLI
Description
IC SRAM 1MBIT 35NS 32SOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr
Datasheet

Specifications of IS62C1024AL-35QLI

Memory Size
1M (128K x 8)
Package / Case
32-SOP
Interface
Parallel
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Speed
35ns
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Access Time
35 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
30 mA
Organization
128 K x 8
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Density
1Mb
Access Time (max)
35ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOP
Operating Temp Range
-40C to 85C
Supply Current
30mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
706-1041

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IS62C1024AL
IS65C1024AL
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. H
06/26/08
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
128K x 8 LOW POWER CMOS
STATIC RAM
FEATURES
• High-speed access time: 35, 45 ns
• Low active power: 100 mW (typical)
• Low standby power: 20 µW (typical) CMOS
• Output Enable (OE) and two Chip Enable
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, Industrial, and Automotive tem-
• Standard Pin Configuration:
• Lead free available
standby
(CE1 and CE2) inputs for ease in applications
required
perature ranges available
32-pin SOP/ 32-pin TSOP (Type 1)
I/O0-I/O7
A0-A16
V
GND
DD
CE1
CE2
OE
WE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
131,072-word by 8-bit CMOS static RAM. It is fabricated
using high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. T he active LOW W rite Enable
(WE) controls both writing and reading of the memory.
ISSI
MEMORY ARRAY
IS62C1024AL/IS65C1024AL is a low power,
COLUMN I/O
128K x 8
JULY 2008
1

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IS62C1024AL-35QLI Summary of contents

Page 1

... When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2 active LOW W rite Enable (WE) controls both writing and reading of the memory. DECODER MEMORY ARRAY I/O DATA CIRCUIT CONTROL CIRCUIT OE WE 1-800-379-4774 JULY 2008 IS62C1024AL/IS65C1024AL is a low power, 128K x 8 COLUMN I/O 1 ...

Page 2

... L 2 PIN CONFIGURATION 32-Pin TSOP (Type 1) A11 A13 CE2 6 A15 A16 10 A14 11 A12 OPERATING RANGE (IS62C1024AL) Range Commercial 0°C to +70°C Industrial OPERATING RANGE (IS65C1024AL) Range Automotive CE2 I/O Operation High High High out Integrated Silicon Solution, Inc. — www.issi.com — ...

Page 3

... IS62C1024AL IS65C1024AL ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND term t Storage Temperature stg P Power Dissipation Output Current (LOW) out Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli- ability. CAPACITANCE (1,2) Symbol Parameter c Input Capacitance In c Output Capacitance out Notes: 1 ...

Page 4

... IS62C1024AL IS65C1024AL IS62C1024AL/IS65C1024AL POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions I Average operating CE1 = V cc Current Dynamic Operating Supply Current I out V In CE2 = V I TTL Standby Current (TTL Inputs or CE2 ≤ CMOS Standby Current (CMOS Inputs) CE1 ≥ V ce2 ≤ 0.2V Note address and data inputs are cycling at the maximum frequency means no input lines change. max 2 ...

Page 5

... IS62C1024AL IS65C1024AL AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 1a and 1b AC TEST LOADS 1838 Ω 5V OUTPUT 100 pF Including jig and scope Figure 1a. AC WAVEFORMS READ CYCLE NO. 1 (1,2) ADDRESS DOUT Integrated Silicon Solution, Inc. — www.issi.com — Rev. H 06/26/08 Unit ...

Page 6

... IS62C1024AL IS65C1024AL READ CYCLE NO. 2 (1,3) ADDRESS OE CE1 CE2 DOUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = V 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time wc t CE1 to Write End 1 sce t CE2 to Write End 2 sce t Address Setup Time to Write End aw t Address Hold from Write End ha t Address Setup Time sa t (4) ...

Page 7

... IS62C1024AL IS65C1024AL AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled) ADDRESS CE1 CE2 DOUT DATA UNDEFINED DIN WRITE CYCLE NO. 2 (CE1, CE2 Controlled) ADDRESS t SA CE1 CE2 WE DOUT DATA UNDEFINED DIN Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write ...

Page 8

... IS62C1024AL IS65C1024AL DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter V V for Data Retention Data Retention Current Dr t Data Retention Setup Time See Data Retention Waveform sDr t Recovery Time rDr Note: 1. Typical Values are measured 5V DATA RETENTION WAVEFORM (CE1 Controlled) VDD 4.5V 2. CE1 GND DATA RETENTION WAVEFORM (CE2 Controlled) VDD 4.5V CE2 2. 0.4V GND 8 Test Condition See Data Retention Waveform V = 2.0V, CE1 ≥ ...

Page 9

... Commercial Range: 0°C to +70°C Speed (ns) Order Part No. 35 IS62C1024AL-35Q 35 IS62C1024AL-35T Industrial Range: –40°C to +85°C Speed (ns) Order Part No. 35 IS62C1024AL-35QI 35 IS62C1024AL-35QLI 35 IS62C1024AL-35TI 35 IS62C1024AL-35TLI ORDERING INFORMATION: IS65C1024AL Automotive Range: -40°C to +125°C Speed (ns) Order Part No. 45 IS65C1024AL-45QA3 Plastic SOP 45 IS65C1024AL-45QLA3 Plastic SOP, Lead-free ...

Page 10

... IS62C1024AL IS65C1024AL 10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. H 06/26/08 ...

Page 11

... IS62C1024AL IS65C1024AL Integrated Silicon Solution, Inc. — www.issi.com — Rev. H 06/26/08 1-800-379-4774 11 ...

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