LT1001A Advanced Semiconductor, LT1001A Datasheet
LT1001A
Manufacturer Part Number
LT1001A
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Manufacturer
Advanced Semiconductor
Datasheet
1.LT1001A.pdf
(1 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LT1001ACJ8
Manufacturer:
LT
Quantity:
5 510
Company:
Part Number:
LT1001ACJ8
Manufacturer:
LT
Quantity:
5 510
Company:
Part Number:
LT1001ACN8
Manufacturer:
LT
Quantity:
5 510
Company:
Part Number:
LT1001ACN8
Manufacturer:
NSC
Quantity:
5 510
Part Number:
LT1001ACN8
Manufacturer:
ST
Quantity:
20 000
Part Number:
LT1001ACN8#PBF
Manufacturer:
LINEAR/凌特
Quantity:
20 000
Company:
Part Number:
LT1001AMH/883C
Manufacturer:
a
Quantity:
3
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
DESCRIPTION:
The
Frequency Transistor Designed for
High Gain Low Noise CATV, and
MATV Amplifier Applications.
MAXIMUM RATINGS
CHARACTERISTICS
P
T
SYMBOL
V
T
I
DISS
STG
V
CE
JC
C
BV
BV
BV
J
G
NPN SILICON HIGH FREQUENCY TRANSISTOR
ASILT1001A
CE(SAT)
I
h
C
NF
CBO
Umax
f
FE
CEO
CBO
EBO
cb
t
2.5 W @ T
-65 °C to +200 °C
-65 °C to +200 °C
I
I
I
V
V
I
V
V
V
V
C
C
E
C
CB
CE
CE
CB
CE
CE
= 5.0 mA
= 1.0 mA
= 100 A
= 50 mA
70 °C/W
= 10 V
= 5.0 V
= 14 V
= 10 V
= 8.0 V
= 14 V
200 mA
is a High
20 V
C
T
TEST CONDITIONS
= 50
A
= 25 °C
I
I
I
I
B
I
C
C
C
C
O
= 5.0 mA
= 50 mA
= 90 mA
C
= 50 mA
= 90 mA
Specifications are subject to change without notice.
f = 300 MHz
f = 300 MHz
f = 1.0 MHz
f = 300 MHz
MINIMUM
3.5
20
40
70
DIM
A
B
C
D
E
F
G
H
PACKAGE STYLE TO-39
.029 / 0.740
.028 / 0.720
.335 / 8.510
.305 / 7.750
.240 / 6.100
.016 / 0.407
MINIMUM
inches / mm
TYPICAL
1 = EMITTER
3 = COLLECTOR(CASE)
Ø A
G
F
500
3.0
2.5
15
B
.500 / 12.700
.200 / 5.080
E
NONE
H
45°
MAXIMUM
2 = BASE
Ø D
C
.045 / 1.140
.034 / 0.860
.370 / 9.370
.335 / 8.500
.260 / 6.600
.020 / 0.508
MAXIMUM
inches / mm
300
1.6
50
LT1001A
UNITS
GHz
mV
dB
dB
pF
---
REV. A
V
V
V
A
1/1