MAX3208EAUB+ Maxim Integrated Products, MAX3208EAUB+ Datasheet - Page 7

• Manufacturer Part Number: MAX3208EAUB+
• Description: IC ESD PROT DIFF 10-UMAX
• Manufacturer: Maxim Integrated Products
• Type: Diode Arraysr
• Series: MAX3208Er

Specifications of MAX3208EAUB+

• Power (watts): 444mW
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Capacitance Value: 10(Typ) pF
• Maximum Clamping Voltage: 105.5 V
• Number Of Elements Per Chip: 4
• Esd Protection Voltage: ±15@HBM|±15@Air Gap|±8@Contact Disc KV
• Maximum Leakage Current: 0.1 uA
• Channels: 4 Channels
• Clamping Voltage: 100 V
• Operating Voltage: - 0.3 V to + 6.0 V
• Termination Style: SMD/SMT
• Capacitance: 2 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 3.05 (Max) mm W x 3.05 (Max) mm L
• Diode Type: ESD Protection
• Power Dissipation Pd: 444mW
• Diode Case Style: µMAX
• No. Of Pins: 10
• Termination Type: SMD
• Capacitance, Cd: 2.6pF
• Operating Temperature Range: -40°C To +125°C
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Esd Threat Voltage Max: 15kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Breakdown: -
• Voltage - Reverse Standoff (typ): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Proper circuit-board layout is critical to suppress ESD-
induced line transients (See Figure 6). The MAX3205E/
MAX3207E/MAX3208E clamp to 100V; however, with
improper layout, the voltage spike at the device can be
much higher. A lead inductance of 10nH with a 45A
current spike results in an additional 450V spike on the
protected line. It is essential that the layout of the PC
board follows these guidelines:
1) Minimize trace length between the connector or
2) Use separate planes for power and ground to reduce
3) Ensure short low-inductance ESD transient return
4) Minimize conductive power and ground loops.
5) Do not place critical signals near the edge of the PC
Figure 6. Layout Considerations
input terminal, I/O_, and the protected signal line.
parasitic inductance and to reduce the impedance to
the power rails for shunted ESD current.
paths to GND and V
board.
NEGATIVE ESD-
CURRENT
PULSE
PATH TO
GROUND
GND
V
PROTECTED LINE
CC
L1
_______________________________________________________________________________________
D1
D2
Layout Recommendations
CC
I/O_
.
L2
L3
Dual, Quad, and Hex High-Speed
V
C
Differential ESD-Protection ICs
PROTECTED
CIRCUIT
6) Bypass V
7) Bypass the supply of the protected device to GND
For the latest application details on WLP construction,
dimensions, tape carrier information, printed circuit
board techniques, bump-pad layout, and recommend-
ed reflow temperature profile, as well as the latest infor-
mation on reliability testing results, refer to Application
Note 1891: Wafer-Level Packaging (WLP) and Its
Applications .
PROCESS: BiCMOS
0.1μF
tor as close to V
with a low-ESR ceramic capacitor as close to the
supply pin as possible.
V
CC
WLP Applications Information
I/0 LINE
CC
Typical Operating Circuit
I/0_
MAX3205E
MAX3207E
MAX3208E
to GND with a low-ESR ceramic capaci-
CC
as possible.
Chip Information
0.1μF
V
CC
I/0
PROTECTED
CIRCUIT
7