NUP4201DR2G ON Semiconductor, NUP4201DR2G Datasheet

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NUP4201DR2G

Manufacturer Part Number
NUP4201DR2G
Description
IC TVS LO CAP HS DATA 500W 8SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of NUP4201DR2G

Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6V
Power (watts)
500W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
8
Polarity
Uni-Directional
Package Type
SOIC
Operating Temperature Classification
Military
Reverse Breakdown Voltage
6V
Clamping Voltage
12V
Reverse Stand-off Voltage
5V
Leakage Current (max)
10uA
Peak Pulse Current
10A
Peak Pulse Power Dissipation
500W
Test Current (it)
1mA
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Pin Count
8
Operating Voltage
5 V
Breakdown Voltage
6 V
Termination Style
SMD/SMT
Peak Surge Current
10 A
Capacitance
5 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
4 (Max) mm W x 5 (Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NUP4201DR2G
Manufacturer:
TI
Quantity:
430
Part Number:
NUP4201DR2G
Manufacturer:
ON
Quantity:
2 500
Part Number:
NUP4201DR2G
Manufacturer:
ST
0
Part Number:
NUP4201DR2G
Manufacturer:
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Quantity:
20 000
NUP4201DR2
Low Capacitance Surface
Mount TVS for High-Speed
Data Interfaces
protect equipment attached to high speed communication lines from
ESD, EFT, and lightning.
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 6
Peak Power Dissipation
8 x 20 mS @ T
Junction and Storage Temperature Range
Lead Solder Temperature −
Maximum 10 Seconds Duration
The NUP4201DR2 transient voltage suppressor is designed to
IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000−4−4 (EFT) 40 A (5/50 ns)
IEC 61000−4−5 (lightning) 25 A (8/20 ms)
SO−8 Package
Peak Power − 500 Watts 8 x 20 mS
ESD Rating:
UL Flammability Rating of 94 V−0
Pb−Free Package is Available
High Speed Communication Line Protection
USB Power and Data Line Protection
Video Line Protection
Base Stations
HDSL, IDSL Secondary IC Side Protection
Microcontroller Input Protection
A
= 25°C (Note 1)
Rating
Symbol
T
J
P
, T
T
pk
L
stg
−55 to +150
Value
500
260
1
Unit
°C
°C
W
†For information on tape and reel specifications,
NUP4201DR2
NUP4201DR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
SO−8 LOW CAPACITANCE
500 WATTS PEAK POWER
(Note: Microdot may be in either location)
VOLTAGE SUPPRESSOR
REF 1 2
REF 1 3
I/O 1 1
I/O 2 4
8
ORDERING INFORMATION
P4201
A
Y
WW
G
PIN CONFIGURATION
MARKING DIAGRAM
http://onsemi.com
1
AND SCHEMATIC
6 VOLTS
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
8
1
(Pb−Free)
Package
SO−8
SO−8
AYWWG
P4201
Publication Order Number:
G
CASE 751
PLASTIC
SOIC−8
2500/Tape & Reel
2500/Tape & Reel
8 REF 2
7 I/O 4
6 I/O 3
5 REF 2
NUP4201DR2/D
Shipping

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NUP4201DR2G Summary of contents

Page 1

... J stg T 260 °C L NUP4201DR2 NUP4201DR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com SO−8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage @ Reverse Leakage Current @ V = 5.0 Volts RWM Maximum Clamping Voltage @ Maximum Clamping Voltage @ I = ...

Page 3

T, TEMPERATURE (°C) Figure 1. Reverse Breakdown versus Temperature 100 t PEAK VALUE RSM 90 PULSE WIDTH ( ...

Page 4

The new NUP4201DR2 is a low capacitance TVS diode array designed to protect sensitive electronics such as communications systems, computers, and computer peripherals against damage due to ESD events or transient overvoltage voltage conditions. Because of its low capacitance, it ...

Page 5

... ESD transient current levels. This voltage combined −VF with the smaller die can result in device failure. The ON Semiconductor NUP4201DR2 was developed to overcome the disadvantages encountered when using discrete diodes for ESD protection. This device integrates a TVS diode within a network of steering diodes. ...

Page 6

UPSTREAM USB PORT V BUS V BUS D+ D− V BUS Controller GND NUP2201DT1 Figure 12. ESD Protection for USB Port TX+ TX− PHY Ethernet RX+ (10/100) RX− GND Figure 13. Protection for Ethernet 10/100 (Differential mode) TYPICAL ...

Page 7

RTIP RRING V CC T1/E1 TRANCEIVER TTIP TRING Figure 14. TI/E1 Interface Protection http://onsemi.com NUP4201DR2 ...

Page 8

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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