PIC16F716-I/SO Microchip Technology, PIC16F716-I/SO Datasheet - Page 117

IC PIC MCU FLASH 2KX14 18SOIC

PIC16F716-I/SO

Manufacturer Part Number
PIC16F716-I/SO
Description
IC PIC MCU FLASH 2KX14 18SOIC
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F716-I/SO

Program Memory Type
FLASH
Program Memory Size
3.5KB (2K x 14)
Package / Case
18-SOIC (7.5mm Width)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
13
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 4x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
RS- 232/USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
13
Number Of Timers
3
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 8-bit
Package
18SOIC W
Device Core
PIC
Family Name
PIC16
Maximum Speed
20 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT18SO-1 - SOCKET TRANSITION 18SOIC 300MILI3-DB16F716 - BOARD DAUGHTER ICEPIC3AC162054 - HEADER INTERFACE ICD2 16F716AC164010 - MODULE SKT PROMATEII DIP/SOIC
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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7.5
7.6
1997 Microchip Technology Inc.
Reading the EEPROM Data Memory
Writing to the EEPROM Data Memory
To read a data memory location, the user must write the address to the EEADR register and then
set control bit RD (EECON1<0>). The data is available, in the very next instruction cycle, in the
EEDATA register; therefore it can be read by the next instruction. EEDATA will hold this value until
another read or until it is written to by the user (during a write operation).
Example 7-1: Data EEPROM Read
To write an EEPROM data location, the user must first write the address to the EEADR register
and the data to the EEDATA register. Then the user must follow a specific sequence to initiate the
write for each byte.
Example 7-2: Data EEPROM Write
The write will not initiate if the above sequence is not exactly followed (write 55h to EECON2,
write AAh to EECON2, then set WR bit) for each byte. We strongly recommend that interrupts be
disabled during this code segment.
Additionally, the WREN bit in EECON1 must be set to enable write. This mechanism prevents
accidental writes to data EEPROM due to errant (unexpected) code execution (i.e., lost pro-
grams). The user should keep the WREN bit clear at all times, except when updating EEPROM.
The WREN bit is not cleared by hardware
After a write sequence has been initiated, clearing the WREN bit will not affect this write cycle.
The WR bit will be inhibited from being set unless the WREN bit is set.
At the completion of the write cycle, the WR bit is cleared in hardware and the EE Write Complete
Interrupt Flag bit (EEIF) is set. The user can either enable this interrupt or poll this bit. EEIF must
be cleared by software.
Sequence
Required
BCF
MOVLW
MOVWF
BSF
BSF
BCF
MOVF
STATUS, RP0
CONFIG_ADDR
EEADR
STATUS, RP0
EECON1, RD
STATUS, RP0
EEDATA, W
BSF
BCF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
Section 7. Data EEPROM
; Bank0
; Any location in Data EEPROM memory space
; Address to read
; Bank1
; EE Read
; Bank0
; W = EEDATA
STATUS, RP0
INTCON, GIE
EECON1, WREN ; Enable Write
55h
EECON2
AAh
EECON2
EECON1,WR
INTCON, GIE
; Bank1
; Disable INTs.
;
; 55h must be written to EECON2
;
; Write AAh
; Set WR bit begin write
; Enable INTs.
to start write sequence
DS31007A-page 7-5
7

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