AT90USB162-16MUR Atmel, AT90USB162-16MUR Datasheet - Page 249
AT90USB162-16MUR
Manufacturer Part Number
AT90USB162-16MUR
Description
IC AVR MCU 16K FLASH 32QFN
Manufacturer
Atmel
Series
AVR® 90USBr
Datasheet
1.AT90USB82-16MU.pdf
(307 pages)
Specifications of AT90USB162-16MUR
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, PS/2, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
22
Program Memory Size
16KB (16K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TQFN
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
SPI, USART, debugWIRE
Maximum Clock Frequency
16 MHz
Number Of Programmable I/os
22
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
For Use With
ATSTK600-TQFP32 - STK600 SOCKET/ADAPTER 32-TQFP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data Converters
-
Lead Free Status / Rohs Status
Details
Other names
AT90USB162-16MURTR
AT90USB162-16MUTR
AT90USB162-16MUTR
AT90USB162-16MUTR
AT90USB162-16MUTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT90USB162-16MUR
Manufacturer:
TT
Quantity:
400 000
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25.6
25.6.1
25.6.2
25.6.3
25.6.4
7707F–AVR–11/10
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
Programming the Flash
The following algorithm puts the device in parallel programming mode:
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
The Flash is organized in pages, see
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after
5. Wait at least 50 µs before sending a new command.
• The command needs only be loaded once when writing or reading multiple memory
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
locations.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
100 ns.
+12V has been applied to RESET, will cause the device to fail entering programming
mode.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
CC
and GND.
Table 25-11 on page
Table 25-8 on page 248
(1)
memories plus Lock bits. The Lock bits are
248. When programming the Flash,
to “0000” and wait at least
AT90USB82/162
249
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