R5F212G5SNFP#U0 Renesas Electronics America, R5F212G5SNFP#U0 Datasheet - Page 27

• Manufacturer Part Number: R5F212G5SNFP#U0
• Description: IC R8C/2G MCU FLASH 32LQFP
• Manufacturer: Renesas Electronics America
• Series: R8C/2x/2Gr

Specifications of R5F212G5SNFP#U0

• Core Processor: R8C
• Core Size: 16/32-Bit
• Speed: 8MHz
• Connectivity: LIN, SIO, UART/USART
• Peripherals: POR, PWM, Voltage Detect, WDT
• Number Of I /o: 27
• Program Memory Size: 24KB (24K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 32-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -

R8C/2G Group
Rev.1.00
REJ03B0223-0100
Table 5.3
NOTES:
−
−
−
−
−
−
−
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to block A, a 1 Kbyte block, and then the block is erased, the programming/erasure endurance
still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erase count of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
Apr 04, 2008
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
Block erase time
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Program ROM) Electrical Characteristics
Parameter
opr
Page 25 of 41
(7)
= 0 to 60°C, unless otherwise specified.
(2)
Ambient temperature = 55°C
Conditions
100
Min.
2.7
2.2
20
−
−
0
(3)
Typ.
0.4
50
Standard
−
−
−
−
−
5. Electrical Characteristics
Max.
400
5.5
5.5
60
−
9
−
times
year
Unit
µs
°C
V
V
s