ATTINY25V-15ST Atmel, ATTINY25V-15ST Datasheet - Page 140

MCU AVR 2K FLASH 4MHZ 8-SOIC

ATTINY25V-15ST

Manufacturer Part Number
ATTINY25V-15ST
Description
MCU AVR 2K FLASH 4MHZ 8-SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet

Specifications of ATTINY25V-15ST

Package / Case
8-SOIC (3.9mm Width)
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Speed
8MHz
Number Of I /o
6
Eeprom Size
128 x 8
Core Processor
AVR
Program Memory Type
FLASH
Ram Size
128 x 8
Program Memory Size
2KB (2K x 8)
Data Converters
A/D 4x10b
Oscillator Type
Internal
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Connectivity
USI
Core Size
8-Bit
Processor Series
ATTINY2x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
128 B
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY25V-15ST
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
140
ATtiny25/45/85
Table 21-9.
Figure 21-2. Serial Programming Waveforms
Table 21-10. Serial Programming Instruction Set
Symbol
t
t
t
t
Instruction
Programming Enable
Chip Erase
Read Program
Memory
Load Program
Memory Page
Write Program
Memory Page
Read EEPROM
Memory
Write EEPROM
Memory
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
SERIAL DATA INPUT
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
SAMPLE
(MOSI)
(MISO)
(SCK)
Byte 1
1010
1100
1010
1100
0010
H000
0100
H000
0100
1100
1010
0000
1100
0000
MSB
MSB
Instruction Format
Byte 2
0101
0011
100x
xxxx
0000
000a
000x
xxxx
0000
000a
000x
xxxx
000x
xxxx
Byte 3
xxxx
xxxx
xxxx
xxxx
bbbb
bbbb
xxxb
bbbb
bbxx
xxxx
xxbb
bbbb
xxbb
bbbb
Minimum Wait Delay
Byte4
xxxx
xxxx
xxxx
xxxx
oooo
oooo
iiii
iiii
xxxx
xxxx
oooo
oooo
iiii
iiii
4.5 ms
4.0 ms
4.0 ms
4.5 ms
Operation
Enable Serial Programming
after RESET goes low.
Chip Erase EEPROM and
Flash.
Read H (high or low) data o
from Program memory at
word address a:b.
Write H (high or low) data i to
Program memory page at
word address b. Data low
byte must be loaded before
Data high byte is applied
within the same address.
Write Program memory Page
at address a:b.
Read data o from EEPROM
memory at address b.
Write data i to EEPROM
memory at address b.
LSB
LSB
7598H–AVR–07/09

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