AT90USB162-16AU Atmel, AT90USB162-16AU Datasheet - Page 259

• Manufacturer Part Number: AT90USB162-16AU
• Description: MCU AVR USB 16K FLASH 32-TQFP
• Manufacturer: Atmel
• Series: AVR® 90USBr

Specifications of AT90USB162-16AU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI, PS/2, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 22
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TQFP, 32-VQFP
• Processor Series: AT90USBx
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI/USART/debugWIRE
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 22
• Number Of Timers: 2
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATSTK525, ATSTK526, ATAVRISP2, ATAVRONEKIT, AT90USBKEY, ATEVK525
• Minimum Operating Temperature: - 40 C
• No. Of I/o's: 22
• Eeprom Memory Size: 512Byte
• Ram Memory Size: 512Byte
• Cpu Speed: 16MHz
• No. Of Timers: 2
• Embedded Interface Type: SPI, USART
• Rohs Compliant: Yes
• For Use With: ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK526 - KIT STARTER FOR AT90USB82/162ATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATSTK525 - KIT STARTER FOR AT90USBAT90USBKEY2 - KIT DEMO FOR AT90USB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

7707F–AVR–11/10
Table 25-15. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Figure 25-11. Serial Programming Waveforms
Symbol
t
t
t
5. The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
WD_FLASH
WD_EEPROM
WD_ERASE
Memory Page instruction. To ensure correct loading of the page, the data low byte must
be loaded before data high byte is applied for a given address. The Program Memory
Page is stored by loading the Write Program Memory Page instruction with the address
lines 15..8. Before issuing this command, make sure the instruction Load Extended
Address Byte has been used to define the MSB of the address. The extended address
byte is stored until the command is re-issued, i.e., the command needs only to be
issued for the first page, since the memory size is not larger than 64KWord. If polling
(
page. (See
write operation completes can result in incorrect programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling is not used, the user must
wait at least t
erased device, no 0xFFs in the data file(s) need to be programmed.
content at the selected address at serial output PDO. When reading the Flash memory,
use the instruction Load Extended Address Byte to define the upper address byte,
which is not included in the Read Program Memory instruction. The extended address
byte is stored until the command is re-issued, i.e., the command needs only to be
issued for the first page, since the memory size is not larger than 64KWord.
operation.
Set RESET to “1”.
Turn V
SERIAL DATA OUTPUT
SERIAL CLOCK INPUT
RDY/BSY
SERIAL DATA INPUT
CC
) is not used, the user must wait at least t
power off.
SAMPLE
Table
(MOSI)
(MISO)
(SCK)
WD_EEPROM
25-15.) Accessing the serial programming interface before the Flash
before issuing the next byte. (See
MSB
MSB
Minimum Wait Delay
WD_FLASH
4.5 ms
9.0 ms
9.0 ms
Table
AT90USB82/162
before issuing the next
25-15.) In a chip
LSB
LSB
259