R5F363AENFA#U0 Renesas Electronics America, R5F363AENFA#U0 Datasheet - Page 97

• Manufacturer Part Number: R5F363AENFA#U0
• Description: MCU 4KB FLASH 256/16K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: M16C/60/63r

Specifications of R5F363AENFA#U0

• Core Processor: M16C/60
• Core Size: 16/32-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, I²C, SIO, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 20K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 100-QFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

M16C/63 Group
REJ03B0271-0100 Rev.1.00 Sep 15, 2009
Page 95 of 113
Figure 5.29
Memory Expansion Mode and Microprocessor Mode
(in no wait state setting)
Read timing
Write timing
BCLK
CSi
ADi
BHE
ALE
RD
DBi
BCLK
CSi
ADi
BHE
ALE
WR, WRL,
WRH
DBi
Timing Diagram
t
Measuring conditions
cyc
V
Input timing voltage: V = 0.6 V, V
Output timing voltage: V = 1.5 V, V
CC1
=
= V
(0.5 × t
f
(BCLK)
25ns(max.)
1
t
d(BCLK-ALE)
CC2
25ns(max.)
t
t
d(BCLK-ALE)
30ns(max.)
d(BCLK-CS)
t
30ns(max.)
30ns(max.)
d(BCLK-AD)
t
t
t
d(BCLK-RD)
d(BCLK-AD)
30ns(max.)
30ns(max.)
cyc
d(BCLK-CS)
Hi-Z
= 3 V
-60)ns(max.)
t
ac1(RD-DB)
t
t
cyc
cyc
t
su(DB-RD)
50ns(min.)
IL
t
-4ns(min.)
Hi-Z
h(BCLK-ALE)
OL
t
t
-4ns(min.)
d(BCLK-WR)
h(BCLK-ALE)
30ns(max.)
IH
(0.5 × t
OH
= 2.4 V
t
t
40ns(max.)
0ns(min.)
h(BCLK-RD)
d(BCLK-DB)
t
t
0ns(min.)
0ns(min.)
cyc
h(BCLK-CS)
h(BCLK-AD)
t
= 1.5 V
d(DB-WR)
t
0ns(min.)
t
h(RD-DB)
0ns(min.)
h(RD-AD)
-40)ns(min.)
(0.5 × t
t
t
h(WR-AD)
h(BCLK-WR)
(0.5 × t
0ns(min.)
t
h(WR-DB)
cyc
-10)ns(min.)
cyc
-10)ns(min.)
t
0ns(min.)
h(BCLK-AD)
t
t
0ns(min.)
0ns(min.)
h(BCLK-CS)
h(BCLK-DB)
V
CC1
5. Electrical Characteristics
= V
CC2
= 3 V