HD64F3694FY Renesas Electronics America, HD64F3694FY Datasheet - Page 318

IC H8 MCU FLASH 32K 48-LQFP

HD64F3694FY

Manufacturer Part Number
HD64F3694FY
Description
IC H8 MCU FLASH 32K 48-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Datasheet

Specifications of HD64F3694FY

Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, SCI
Peripherals
PWM, WDT
Number Of I /o
29
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
48-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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Section 17 EEPROM
17.5
17.5.1
When V
notices described below to prevent the data to be destroyed.
1. SCL and SDA should be fixed to V
2. V
3. When V
4. V
17.5.2
The endurance is 10
10
device is page-programmed less than 10
17.5.3
This EEPROM has a noise suppression function at SCL and SDA inputs, that cuts noise of width
less than 50 ns. Be careful not to allow noise of width more than 50 ns because the noise of with
more than 50 ms is recognized as an active pulse.
Rev.5.00 Nov. 02, 2005 Page 288 of 418
REJ09B0028-0500
4
cycles/byte in case of byte programming. The data retention time is more than 10 years when a
turned on from the ground level (V
CC
CC
should be turned off after the EEPROM is placed in a standby state.
turn on speed should be longer than 10 us.
CC
Usage Notes
Data Protection at V
Write/Erase Endurance
Noise Suppression Time
is turned on or off, the data might be destroyed by malfunction. Be careful of the
CC
is turned on from the intermediate level, malfunction is caused, so V
5
cycles/page (1% cumulative failure rate) in case of page programming and
CC
On/Off
SS
CC
).
4
or V
cycles.
SS
during V
CC
on/off.
CC
should be

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