MCP617-I/SN Microchip Technology, MCP617-I/SN Datasheet - Page 4

• Manufacturer Part Number: MCP617-I/SN
• Description: IC OPAMP 2.3V DUAL R-R 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP617-I/SN

• Slew Rate: 0.08 V/µs
• Operating Temperature: -40°C ~ 85°C
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 190kHz
• Current - Input Bias: 15nA
• Voltage - Input Offset: 150µV
• Current - Supply: 19µA
• Current - Output / Channel: 17mA
• Voltage - Supply, Single/dual (±): 2.3 V ~ 5.5 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Op Amp Type: General Purpose
• No. Of Amplifiers: 2
• Bandwidth: 190kHz
• Supply Voltage Range: 2.3V To 5.5V
• Amplifier Case Style: SOIC
• No. Of Pins: 8
• Number Of Channels: 2
• Voltage Gain Db: 120 dB
• Common Mode Rejection Ratio (min): 80 dB
• Input Offset Voltage: 0.15 mV
• Operating Supply Voltage: 3 V, 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Details

MCP616/7/8/9
AC ELECTRICAL CHARACTERISTICS
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1:
Pin on the MCP618.
DS21613C-page 4
Electrical Specifications: Unless otherwise indicated, V
R
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Specifications: Unless otherwise indicated, V
R
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
Amplifier Output Leakage
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time
CS High to Amplifier Output High-Z
CS Hysteresis
V
L
L
OUT
= 100 kΩ to V
= 100 kΩ to V
CS
I
I
CS
SS
High-Z
(typical)
(typical)
-50 nA
10 nA
Parameters
Parameters
t
DD
DD
ON
/2 and C
/2 and C
V
IL
Timing Diagram for the CS
L
L
= 60 pF.
= 60 pF.
(typical)
-19 µA
V
IH
t
OFF
I
O(LEAK)
V
Sym
GBWP
I
t
I
Sym
V
t
HYST
V
CSL
CSH
I
OFF
(typical)
(typical)
ON
PM
SS
SR
E
-50 nA
e
10 nA
i
IH
IL
High-Z
ni
ni
ni
0.8 V
DD
DD
Min
–1.0
V
—
—
—
—
—
-2
= +2.3V to +5.5V, V
= +2.3V to +5.5V, V
SS
Min
—
—
—
—
—
—
DD
-0.05
Typ
0.01
0.01
0.1
0.6
10
—
—
9
Typ
0.08
190
2.2
57
32
70
0.2 V
Max
V
100
—
—
—
—
—
DD
2
Max
DD
SS
SS
—
—
—
—
—
—
= GND, T
= GND, T
Units
µA
µA
µA
nA
µs
µs
V
V
V
nV/√Hz
fA/√Hz
Units
µV
V/µs
kHz
A
A
CS = V
CS = V
CS = V
CS = V
CS = 0.2V
G = +1 V/V, R
CS = 0.8V
G = +1 V/V, R
V
°
P-P
= 25°C, V
DD
= 25°C, V
= 5.0V
© 2008 Microchip Technology Inc.
SS
DD
DD
DD
G = +1V/V
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
DD
DD
CM
CM
Conditions
to V
to V
L
L
= V
= V
= 1 kΩ to V
= 1 kΩ to V
Conditions
OUT
OUT
DD
DD
/2, V
/2, V
= 0.9V
= 0.1V
OUT
OUT
SS
SS
DD
DD
≈ V
≈ V
/2,
/2,
DD
DD
/2,
/2,