MCP6022-E/SN Microchip Technology, MCP6022-E/SN Datasheet - Page 3

• Manufacturer Part Number: MCP6022-E/SN
• Description: IC OPAMP DUAL 2.5V 10MHZ 8SOIC
• Manufacturer: Microchip Technology

Specifications of MCP6022-E/SN

• Slew Rate: 7 V/µs
• Package / Case: 8-SOIC (3.9mm Width)
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 10MHz
• Current - Input Bias: 1pA
• Voltage - Input Offset: 500µV
• Current - Supply: 1mA
• Current - Output / Channel: 30mA
• Voltage - Supply, Single/dual (±): 2.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Channels: 2
• Common Mode Rejection Ratio (min): 70 dB
• Input Offset Voltage: 0.25 mV
• Input Bias Current (max): 5000 pA
• Operating Supply Voltage: 3 V, 5 V
• Supply Current: 2.7 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Shutdown: No
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.5 V
• Technology: CMOS
• Voltage Gain Db: 110 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

DC CHARACTERISTICS (CONTINUED)
AC CHARACTERISTICS
MCP6023 CHIP SELECT (CS) CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
V
Output
Maximum Output Voltage Swing
Output Short Circuit Current
Power Supply
Supply Voltage
Quiescent Current per Amplifier
Electrical Specifications: Unless otherwise indicated, T
R
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Settling Time, 0.2%
Slew Rate
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = 1
f = 1 kHz, G = 1, R
f = 1 kHz, G = +1 V/V
f = 1 kHz, G = +10 V/V
f = 1 kHz, G = +100 V/V
Noise
Input Voltage Noise
Input Voltage Noise Density
Input Current Noise Density
Electrical Specifications: Unless otherwise indicated, T
R
DC Characteristics
CS Logic Threshold, Low
CS Input Current, Low
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current
Amplifier Output Leakage
Timing
CS Low to Amplifier Output
Turn-on Time
CS High to Amplifier Output
High-Z Turn-off Time
Hysteresis
2003 Microchip Technology Inc.
CM
L
L
= 10 k
= 10 k
= V
DD
Parameters
/2, V
Parameters
to V
to V
Parameters
DD
DD
OUT
L
/2 and C
/2 and C
= 600 @1 KHz
V
DD
L
L
= 60 pF.
= 60 pF.
/2 and R
V
t
THD+N
THD+N
THD+N
THD+N
THD+N
GBWP
L
SETTLE
Sym
I
t
I
Sym
V
CSH
t
HYST
V
CSL
I
OFF
—
PM
SS
ON
SR
V
E
e
i
IH
= 10 k
IL
ni
ni
OL
ni
Sym
I
V
I
, V
SC
Q
S
OH
0.8V
-1.0
Min
Min
—
—
—
—
—
—
0
—
—
—
—
—
—
—
—
—
—
—
—
to V
DD
V
SS
Min
A
A
DD
2.5
0.5
—
+15
= 25°C, V
= 25°C, V
0.00053
0.00064
/2.
0.0014
0.0009
0.01
0.01
0.05
0.01
0.01
Typ
0.005
0.6
—
—
Typ
250
2
7.0
2.9
8.7
10
65
3
A
= +25°C, V
Typ
±30
1.0
DD
DD
—
—
0.2V
V
Max
2.0
2.0
—
—
10
—
—
= +2.5V to +5.5V, V
= +2.5V to +5.5V, V
DD
Max
—
—
—
—
—
—
—
—
—
—
—
—
DD
V
Max
DD
1.35
DD
5.5
—
Units
-20
µA
µA
µA
µA
µs
µs
nV/ Hz
V
V
V
fA/ Hz
µVp-p
Units
= +2.5V to +5.5V, V
MHz
V/µs
ns
%
%
%
%
%
°
Units
CS = V
CS = V
CS = V
CS = V
G = 1, V
CS = 0.2V
G = 1, V
CS = 0.8V
Internal Switch
mV
mA
mA
MCP6021/2/3/4
V
SS
SS
G = 1
G = 1, V
V
V
V
V
V
f = 0.1 Hz to 10 Hz
f = 10 kHz
f = 1 kHz
OUT
OUT
OUT
OUT
OUT
= GND, V
= GND, V
SS
DD
DD
DD
0.5V output overdrive
I
O
IN
IN
= 0.25V + 3.25V, BW = 22 kHz
= 0.25V + 3.25V, BW = 22 kHz
= 4V
= 4V
= 4V
= 0
DD
DD
= V
= V
OUT
to V
to V
P-P
P-P
P-P
SS
SS
CM
CM
Conditions
= 100 mV
SS
,
,
, V
, V
, V
OUT
OUT
Conditions
= V
= V
Conditions
DD
DD
DD
= GND,
= 0.45V
= 0.05V
DD
DD
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
= 5.0V, BW = 22 kHz
/2, V
/2, V
DS21685B-page 3
p-p
DD
DD
OUT
OUT
time
time
V
V
DD
DD
/2,
/2,