MC33164D-3G ON Semiconductor, MC33164D-3G Datasheet - Page 6

• Manufacturer Part Number: MC33164D-3G
• Description: IC SENSING CIRCUIT UV 3V 8-SOIC
• Manufacturer: ON Semiconductor
• Type: Simple Reset/Power-On Resetr

Specifications of MC33164D-3G

• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Voltage - Threshold: 2.68V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Monitored Voltage: 3 V
• Undervoltage Threshold: 2.71 V
• Overvoltage Threshold: 2.8 V
• Manual Reset: No
• Watchdog: No
• Battery Backup Switching: No
• Power-up Reset Delay (typ): Adj
• Supply Voltage (max): 10 V
• Supply Voltage (min): 1 V
• Supply Current (typ): 24 uA
• Maximum Power Dissipation: 700 mW
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Chip Enable Signals: No
• Internal Hysteresis: Yes
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 125 C
• Output Type: Open Collector / Drain
• Power Fail Detection: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reset Timeout: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MC33164D-3G; MC33164D-3GOS

Comparator hysteresis can be increased with the addition of resistor R
I
equations are accurate to ±10% with R
in
Supply
Power
Supply
Power
as V
in
crosses the comparator threshold (Figure 8). An increase of the lower threshold DV
4.3V
I
in
Figure 16. Voltage Monitor
MC3X164-5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
R
Input
H
1.2 V
1.2 V
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
V
in
ref
ref
GND
GND
H
less than 1.0 kW and R
Input
1.2 V
ref
GND
Reset
L
MC3X164-5
between 4.3 kW and 43 kW.
270
H
(MC3X164−5 Shown)
http://onsemi.com
V
DV
where: R
43 kW ≥ R
. The hysteresis equation has been simplified and does not account for the change of input current
R
1.0 k
H
L
≈
th(lower)
Reset
4.3 R
H
R
≤ 1.0 kW
L
≈ 10 R
6
L
≥ 4.3 kW
Reset
H
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164-5, its
output grounds the gate of the L
Microprocessor
H
+ 0.06
x 10
V
CC
Circuit
th(lower)
Figure 17. Solar Powered Battery Charger
- 6
MTP3055EL
R
L
will be observed due to I
Input
1.2 V
ref
GND
2
(mV)
103
123
160
155
199
280
262
306
357
421
530
MOSFET.
V
60
H
in
which is typically 10 mA at 4.3 V. The
DV
(mV)
1.0
1.0
1.0
2.2
2.2
2.2
4.7
4.7
4.7
4.7
4.7
0
Test Data
th
Reset
100
100
100
220
220
220
470
470
470
470
470
(W)
R
0
H
Solar
Cells
(kW)
6.8
4.3
6.8
4.3
8.2
6.8
5.6
4.3
R
43
10
10
10
L