MAX6397TATA+T Maxim Integrated Products, MAX6397TATA+T Datasheet - Page 11

IC SW OVERVOLT PROT 8-TDFN

MAX6397TATA+T

Manufacturer Part Number
MAX6397TATA+T
Description
IC SW OVERVOLT PROT 8-TDFN
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of MAX6397TATA+T

Voltage - Working
72V
Technology
Mixed Technology
Power (watts)
1.45W
Number Of Circuits
1
Applications
General Purpose
Package / Case
8-TDFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Clamping
-
Figure 6. Setting the MAX6397/MAX6398 Overvoltage Threshold
Figure 7. Reverse Battery Protection Using a Diode or p-Channel MOSFET
Use a diode or p-channel MOSFET to protect the
MAX6397/MAX6398 during a reverse-battery insertion
(Figures 7a, 7b). Low p-channel MOSFET on-resistance
of 30mΩ or less yields a forward-voltage drop of only a
few millivolts (versus hundreds of millivolts for a diode,
Figure 7a) thus improving efficiency.
Connecting a positive battery voltage to the drain of Q1
(Figure 7b) produces forward bias in its body diode,
which clamps the source voltage one diode drop below
V
BATT
IN
(a)
______________________________________________________________________________________
Reverse-Battery Protection
IN
MAX6397
MAX6398
Overvoltage Protection Switch/Limiter
MAX6397
MAX6398
GND
IN
GATE
GND
GATE
OUT
OUT
SET
R1
R2
Controllers Operate Up to 72V
LOAD
V
BATT
(b)
the drain voltage. When the source voltage exceeds
Q1’s threshold voltage, Q1 turns on. Once the FET is
on, the battery is fully connected to the system and can
deliver power to the device and the load.
An incorrectly inserted battery reverse-biases the FET’s
body diode. The gate remains at the ground potential.
The FET remains off and disconnects the reversed bat-
tery from the system. The zener diode and resistor com-
bination prevent damage to the p-channel MOSFET
during an overvoltage condition.
Q1
IN
R1
R2
MAX6397
MAX6398
IN
SET
GND
IN
MAX6397
MAX6398
GATE
GND
GATE
OUT
OUT
LOAD
11

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