TISP4125F3LMFR Bourns Inc., TISP4125F3LMFR Datasheet

SURGE SUPP THYRISTOR 100V TO-92

TISP4125F3LMFR

Manufacturer Part Number
TISP4125F3LMFR
Description
SURGE SUPP THYRISTOR 100V TO-92
Manufacturer
Bourns Inc.
Datasheets
1.TISP4072F3LMFR.pdf (8 pages)
2.TISP4350M3LM-S.pdf (5 pages)

Specifications of TISP4125F3LMFR

Package / Case
TO-92-2, TO-226AC
Voltage - Breakover
125V
Voltage - Off State
100V
Voltage - On State
3V
Current - Peak Pulse (8 X 20µs)
120A
Current - Peak Pulse (10 X 1000µs)
35A
Current - Hold (ih)
150mA
Number Of Elements
1
Capacitance
43pF
Breakover Current Ibo Max
4 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Forward Voltage Drop
3 V
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
Rated for International Surge Wave Shapes
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
fl ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping un-
til the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes
the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as
the diverted current subsides.
NOVEMBER 1997 - REVISED JANUARY 2010
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
Insert xxx value corresponding to protection voltages of 072, 082, 125 etc.
TISP4xxxF3LM
Description
How to Order
Waveshape
10/1000 μs
Device
0.5/700 μs
Device
10/160 μs
10/700 μs
10/560 μs
................................................UL Recognized Component
‘4072
‘4082
‘4125
‘4150
‘4180
‘4240
‘4260
‘4290
‘4320
‘4380
V
Formed Lead DO-92 (LMF) Tape and Reeled
100
120
145
180
200
220
240
270
Straight Lead DO-92 (LM)
DRM
58
66
V
ITU-T K.20/21
FCC Part 68
FCC Part 68
REA PE-60
Standard
V
I3124
Package
125
150
180
240
260
290
320
380
72
82
(BO)
V
I
TSP
60
38
50
45
35
A
Tape and Reeled
TISP4xxxF3LM Overvoltage Protector Series
Bulk Pack
Carrier
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxF3LMFR-S
TISP4xxxF3LMR-S
TISP4xxxF3LM-S
Order As
LM Package (Top View)
LMF Package (LM Package with Formed Leads) (Top View)
Device Symbol
TISP4180F3LM, and TISP4290F3LMF are currently available,
T(A)
NC
R(B)
T(A)
NC
R(B)
Models TISP4072F3LMF, TISP4125F3LM, TISP4180F3LMF,
NC - No internal connection on pin 2
NC - No internal connection on pin 2
Terminals T and R correspond to the
alternative line designators of A and B
TISP4072F3LM THRU TISP4082F3LM,
TISP4125F3LM THRU TISP4180F3LM,
TISP4240F3LM THRU TISP4380F3LM
although not recommended for new designs.
R
T
1
2
3
1
2
3
SD4XAA
MD4XAKB
MD4XAT

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TISP4125F3LMFR Summary of contents

Page 1

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) Device V V ‘4072 58 72 ‘4082 66 82 ‘4125 100 125 ‘4150 120 150 ‘4180 145 180 ‘4240 180 240 ‘4260 200 260 ...

Page 2

TISP4xxxF3LM Overvoltage Protector Series Description (Continued) This TISP4xxxF3LM range consists of ten voltage variants to meet various maximum system voltage levels ( 270 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in ...

Page 3

TISP4xxxF3LM Overvoltage Protector Series Electrical Characteristics °C (Unless Otherwise Noted) A Parameter Repetitive peak off- = ± DRM D state current dv/dt = ±250 V/ms Breakover voltage (BO) dv/dt = ±1000 Impulse breakover ...

Page 4

TISP4xxxF3LM Overvoltage Protector Series TISP4xxxF3LM Overvoltage Protector Series Parameter Measurement Information V DRM -v I DRM I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage- Current Characteristic for R and T Terminals All Measurements are Referenced to the ...

Page 5

TISP4xxxF3LM Overvoltage Protector Series TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 0·1 0·01 0·001 - Junction Temperature - °C J Figure 2. NORMALIZED ...

Page 6

TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics NORMALIZED BREAKOVER VOLTAGE vs RATE OF RISE OF PRINCIPLE CURRENT 1.3 POSITIVE POLARITY 1.2 THRU 1.1 1.0 0·001 0·01 0·1 1 di/dt - Rate of Rise of Principal Current - A/µs Figure 6. OFF-STATE ...

Page 7

TISP4xxxF3LM Overvoltage Protector Series Typical Characteristics 10 NOVEMBER 1997 - REVISED JANUARY 2010 Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications. NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 9 ...

Page 8

TISP4xxxF3LM Overvoltage Protector Series Device Symbolization Code Devices will be coded as below. Carrier Information Devices are shipped in one of the carriers below. A reel contains 2,000 devices. Device TISP4xxxF3LM Formed Lead DO-92 (LMF) Tape and Reeled Insert xxx ...

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