ALD110914PAL Advanced Linear Devices Inc, ALD110914PAL Datasheet

ALD110914PAL

Manufacturer Part Number

ALD110914PAL

Description

MOSFET N-CH 10.6V DUAL 8PDIP

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD110914PAL.pdf (11 pages)

Specifications of ALD110914PAL

Package / Case

8-DIP (0.300", 7.62mm)

Fet Type

2 N-Channel (Dual)

Fet Feature

Standard

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

1.42V @ 1µA

Power - Max

500mW

Mounting Type

Through Hole

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohm (Typ) @ 4 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1042

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* Contact factory for industrial temp. range or user-specified threshold voltage values.

GENERAL DESCRIPTION

ALD110814/ALD110914 are monolithic quad/dual enhancement mode N-

Channel MOSFETs matched at the factory using ALD’s proven EPAD®

CMOS technology. These devices are intended for low voltage, small sig-

nal applications.

The ALD110814/ALD110914 MOSFETs are designed and built with ex-

ceptional device electrical characteristics matching. Since these devices

are on the same monolithic chip, they also exhibit excellent tempco track-

ing characteristics. Each device is versatile as a circuit element and is a

useful design component for a broad range of analog applications. They

are basic building blocks for current sources, differential amplifier input

stages, transmission gates, and multiplexer applications. For most appli-

cations, connect the V- and N/C pins to the most negative voltage in the

system and the V+ pin to the most positive voltage. All other pins must

have voltages within these voltage limits.

The ALD110814/ALD110914 devices are built for minimum offset voltage

and differential thermal response, and they are designed for switching

and amplifying applications in +1.5V to +10V systems where low input

bias current, low input capacitance and fast switching speed are desired.

Since these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment.

The ALD110814/ALD110914 are suitable for use in precision applications

which require very high current gain, beta, such as current mirrors and

current sources. The high input impedance and the high DC current gain

of the Field Effect Transistors result in extremely low current loss through

the control gate. The DC current gain is limited by the gate input leakage

current, which is specified at 30pA at room temperature. For example, DC

beta of the device at a drain current of 3mA and input leakage current of

30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +1.40V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ALD110814SCL ALD110814PCL

ORDERING INFORMATION

GS(th)

16-Pin

SOIC

Package

match to 10mV

0°C to +70°C

INEAR

DVANCED

EVICES,

Operating Temperature Range*

Plastic Dip

16-Pin

Package

NC.

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD

(“L” suffix for lead free version)

Ω typical

GS(th)

ALD110914SAL ALD110914PAL

temperature coefficient

Package

8-Pin

SOIC

0°C to +70°C

MATCHED PAIR MOSFET ARRAY

Package

8-Pin

Plastic Dip

www.aldinc.com

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches

PIN CONFIGURATION

N/C*

*N/C pins are internally connected.

V -

SCL, PCL PACKAGES

SAL, PAL PACKAGES

ALD110914

Connect to V-

M 1

M 4

ALD110814/ALD110914

ALD110814

M 2

M 3

M 2

V GS(th) = +1.40V

V -

N/C*

V -

N/C*

EPAD

Related parts for ALD110914PAL

ALD110914PAL Summary of contents

Page 1

... Rev 2.0 ©2010 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 MATCHED PAIR MOSFET ARRAY temperature coefficient 0°C to +70°C 8-Pin 8-Pin SOIC Plastic Dip Package Package ALD110914SAL ALD110914PAL www.aldinc.com ALD110814/ALD110914 ® V GS(th) = +1.40V APPLICATIONS • Precision current mirrors • Precision current sources • Voltage choppers • Differential amplifier input stages • ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

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ALD110914PAL Advanced Linear Devices Inc, ALD110914PAL Datasheet

ALD110914PAL

Specifications of ALD110914PAL

Related parts for ALD110914PAL

ALD110914PAL Summary of contents

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