ALD110808SCL Advanced Linear Devices Inc, ALD110808SCL Datasheet

ALD110808SCL

Manufacturer Part Number

ALD110808SCL

Description

MOSFET N-CH 10.6V QUAD 16SOIC

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD110908PAL.pdf (11 pages)

Specifications of ALD110808SCL

Package / Case

16-SOIC (0.154", 3.90mm Width)

Fet Type

4 N-Channel (H-Bridge)

Fet Feature

Standard

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

820mV @ 1µA

Power - Max

500mW

Mounting Type

Surface Mount

Minimum Operating Temperature

0 C

Configuration

Quad

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohm (Typ) @ 4.8 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1027

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GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/

dual enhancement mode N-Channel MOSFETs matched at the factory

using ALD’s proven EPAD® CMOS technology. These devices are intended

for low voltage, small signal applications.

These MOSFET devices are built on the same monolithic chip, so they

exhibit excellent temperature tracking characteristics. They are versatile

as circuit elements and are useful design component for a broad range of

analog applications. They are basic building blocks for current sources,

differential amplifier input stages, transmission gates, and multiplexer

applications. For most applications, connect the V- and N/C pins to the

most negative voltage in the system and the V+ pin to the most positive

voltage. All other pins must have voltages within these voltage limits.

ALD110808/ALD110908 devices are built for minimum offset voltage and

differential thermal response, and they are suited for switching and ampli-

fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias

current, low input capacitance and fast switching speed are desired. As

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

These devices are suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the

device at a drain current of 3mA and input leakage current of 30pA at

25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +0.80V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values.

ALD110808ASCL

ALD110808SCL

GS(th)

16-Pin

SOIC

Package

match to 2mV and 10mV

0°C to +70°C

INEAR

DVANCED

EVICES,

ALD110808APCL

ALD110808PCL

Operating Temperature Range*

16-Pin

Plastic Dip

Package

NC.

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

(“L” suffix for lead free version)

Ω typical

GS(th)

temperature coefficient

ALD110908SAL

ALD110908ASAL ALD110908APAL

SOIC

Package

8-Pin

0°C to +70°C

MATCHED PAIR MOSFET ARRAY

ALD110908PAL

Plastic Dip

Package

8-Pin

www.aldinc.com

ALD110808/ALD110808A/ALD110908/ALD110908A

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Voltage bias circuits

• Sample and Hold

• Analog inverter

• Level shifters

• Source followers and buffers

• Current multipliers

• Analog switches / multiplexers

PIN CONFIGURATION

N/C*

*N/C pins are internally connected.

V -

SCL, PCL PACKAGES

SAL, PAL PACKAGES

Connect to V-

ALD110908

M 1

M 4

M 1

ALD110808

M 3

M 2

V GS(th) = +0.80V

V -

N/C*

EPAD

Related parts for ALD110808SCL

ALD110808SCL Summary of contents

Page 1

... Plastic Dip Package Package ALD110808ASCL ALD110808APCL ALD110808SCL ALD110808PCL * Contact factory for industrial temp. range or user-specified threshold voltage values. Rev 2.0 ©2010 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 ALD110808/ALD110808A/ALD110908/ALD110908A MATCHED PAIR MOSFET ARRAY temperature coefficient 0° ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS ° + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

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ALD110808SCL Advanced Linear Devices Inc, ALD110808SCL Datasheet

ALD110808SCL

Specifications of ALD110808SCL

Related parts for ALD110808SCL

ALD110808SCL Summary of contents

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