SI5499DC-T1-GE3 Vishay, SI5499DC-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI5499DC-T1-GE3
• Description: MOSFET P-CH D-S 1.5V 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5499DC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 800mV @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 8V
• Input Capacitance (ciss) @ Vds: 1290pF @ 4V
• Power - Max: 6.2W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 77mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -550mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5499DC-T1-GE3TR

Si5499DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
14
12
10
8
6
4
2
0
0
Package Limited
25
T
C
-
50
Current Derating*
Case Temperature (°C)
75
100
125
150
S-83054-Rev. C, 29-Dec-08
Document Number: 73321