SI4463BDY-T1-GE3 Vishay, SI4463BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4463BDY-T1-GE3
• Description: MOSFET P-CH G-S 2.5V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4463BDY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: -2.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4463BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72789
S09-0393-Rev. C, 09-Mar-09
0.04
0.03
0.02
0.01
0.00
50
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
5
= 13.7 A
0.2
On-Resistance vs. Drain Current
V
= 10 V
10
GS
V
T
SD
J
= 2.5 V
10
Q
= 150 °C
g
– Source-to-Drain Voltage (V)
I
D
0.4
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
20
15
0.6
20
30
25
T
0.8
J
V
V
= 25 °C
GS
GS
30
= 4.5 V
40
= 10 V
1.0
35
50
1.2
40
5000
4000
3000
2000
1000
0.05
0.04
0.03
0.02
0.01
0.00
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
- 50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
= 5 A
V
I
D
- 25
C
GS
1
= 13.7 A
rss
= 10 V
4
T
V
V
0
2
J
DS
GS
– Junction Temperature (°C)
C
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
I
D
25
Capacitance
= 13.7 A
3
8
50
4
Vishay Siliconix
Si4463BDY
12
75
5
C
iss
www.vishay.com
100
6
16
125
7
150
20
8
3