SI4463BDY-T1-GE3 Vishay, SI4463BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4463BDY-T1-GE3
• Description: MOSFET P-CH G-S 2.5V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4463BDY-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9.8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 13.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 20mohm
• Rds(on) Test Voltage Vgs: -2.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4463BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72789
S09-0393-Rev. C, 09-Mar-09
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Vishay Siliconix
Si4463BDY
www.vishay.com
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