SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI7703EDN-T1-GE3
• Description: MOSFET P-CH D-S 20V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7703EDN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 800µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7703EDN-T1-GE3TR

Si7703EDN
Vishay Siliconix
Notes
a. Surface Mounted on 1" x 1" FR4 board.
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
b
a
a
a
a
Steady State
Steady State
a
t ≤ 10 s
Symbol
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
I
C
g
V
rm
t
t
SD
J
fs
gs
gd
r
f
F
T
g
= 25 °C, unless otherwise noted
J
= 25 °C, unless otherwise noted
V
MOSFET
MOSFET
MOSFET
Schottky
Schottky
Schottky
DS
I
Device
V
D
DS
≅ - 1 A, V
= - 10 V, V
= - 20 V, V
V
V
V
V
V
V
V
V
V
V
I
DS
GS
GS
I
V
DS
DS
DS
F
DS
S
DD
V
DS
GS
r
= 0.5 A, T
r
= - 2.3 A, V
Test Conditions
Test Conditions
= 20 V, T
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= 0 V, V
= - 10 V, I
= 20 V, T
= 0 V, V
= - 20 V, V
= - 1.8 V, I
= - 10 V, R
GEN
I
V
V
GS
GS
F
r
r
= 0.5 A
GS
= 20 V
= 10 V
, I
= - 4.5 V, I
= - 4.5 V, R
Symbol
D
GS
GS
= 0 V, T
J
R
R
J
GS
J
D
= - 800 µA
= 125 °C
thJC
D
D
= 125 °C
thJA
GS
= 85 °C
GS
D
= ± 4.5 V
L
= ± 12 V
= - 6.3 A
= - 6.3 A
= - 5.3 A
= - 4.5 V
= - 1 A
= 10 Ω
= 0 V
= 0 V
J
D
= 85 °C
G
= - 6.3 A
= 6 Ω
Typical
35
51
75
91
10
4
- 0.45
Min.
Min.
- 20
Maximum
0.002
0.041
0.057
0.072
Typ.
- 0.8
Typ.
0.42
0.33
0.10
2.5
2.9
2.5
1.5
14
12
15
12
31
4
115
44
64
94
12
5
S-83043-Rev. C, 22-Dec-08
Document Number: 71429
0.100
± 100
0.048
0.068
0.090
Max.
Max.
± 1.5
- 1.0
- 1.2
0.48
0.4
- 1
- 5
18
23
18
10
1
4
6
°C/W
Unit
Unit
Unit
mA
mA
nC
pF
µA
µA
νs
V
A
Ω
S
V
V