Si7703EDN Vishay Intertechnology, Si7703EDN Datasheet
Si7703EDN
Manufacturer Part Number
Si7703EDN
Description
P-channel 20-V (D-S) MOSFET With Schottky Diode
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7703EDN.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7703EDN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7703EDN-T1-E3
Manufacturer:
SANYO
Quantity:
1 446
Part Number:
Si7703EDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
Si7703EDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
Si7703EDN-TI-E3
Manufacturer:
SEMTECH
Quantity:
1 001
Notes
a.
Document Number: 71429
S-03709—Rev. A, 14-May-01
Drain-Source Voltage (MOSFET and Schottky)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (T
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
V
V
Surface Mounted on 1” x1” FR4 Board.
DS
KA
–20
20
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
(V)
(V)
8
K
3.30 mm
Diode Forward Voltage
7
K
0.048 @ V
0.068 @ V
0.090 @ V
6
PowerPAKt 1212-8
0.48 V @ 0.5 A
r
D
J
DS(on)
Bottom View
= 150_C) (MOSFET)
5
V
Parameter
D
f
GS
GS
GS
(V)
_
(W)
= –4.5 V
= –2.5 V
= –1.8 V
a
1
a
A
2
A
3
a
a
S
3.30 mm
4
a
G
I
I
D
F
–5.3
–4.6
–6.3
1.0
(A)
(A)
T
T
T
T
T
T
A
A
A
A
A
A
New Product
= 25_C
= 85_C
= 25_C
= 85_C
= 25_C
= 85_C
_
Symbol
G
T
J
V
V
V
I
I
P
, T
DM
FM
I
I
I
GS
DS
KA
D
S
F
D
stg
3 kW
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 4500 V
D Ultra-Low Thermal Resistance, PowerPAKt
D Charger Switching
Package with Low 1.07-mm Profile
10 sec
P-Channel MOSFET
"12
–6.3
–4.5
–2.3
2.8
1.5
2.0
1.0
D
S
–55 to 150
–20
–20
20
1.0
7
Vishay Siliconix
Steady State
K
A
"12
–4.3
–3.1
–1.1
Si7703EDN
1.3
0.7
1.1
0.6
www.vishay.com
Unit
_C
W
V
V
A
1
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