Si7703EDN Vishay Intertechnology, Si7703EDN Datasheet - Page 5

• Manufacturer Part Number: Si7703EDN
• Description: P-channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Document Number: 71429
S-03709—Rev. A, 14-May-01
0.0001
0.001
0.01
0.1
20
10
0.01
0.01
1
0.1
0.1
2
1
0
2
1
10
10
Reverse Current vs. Junction Temperature
–4
–4
Duty Cycle = 0.5
0.2
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
T
0.02
J
– Junction Temperature (_C)
0.05
20 V
0.1
50
10
–3
Single Pulse
75
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 V
Normalized Thermal Transient Impedance, Junction-to-Case
10
100
–3
10
–2
125
_
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
New Product
10
–1
10
–2
1
0.1
5
1
0
T
J
= 150_C
0.2
V
10
10
F
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Forward Voltage Drop
–1
– Forward Voltage Drop (V)
DM
JM
– T
0.4
t
A
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
thJA
100
0.6
t
t
1
2
Si7703EDN
(t)
= 75_C/W
T
J
= 25_C
0.8
www.vishay.com
600
1
1.0
5