Si7703EDN Vishay Intertechnology, Si7703EDN Datasheet - Page 3

• Manufacturer Part Number: Si7703EDN
• Description: P-channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Document Number: 71429
S-03709—Rev. A, 14-May-01
0.15
0.12
0.09
0.06
0.03
0.00
20
16
12
8
4
0
8
6
4
2
0
0.0
0
0
V
Gate-Current vs. Gate-Source Voltage
0.5
GS
On-Resistance vs. Drain Current
= 1.8 V
V
4
V
DS
GS
1.0
4
Output Characteristics
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
1.5
8
V
2.0
GS
8
= 5 thru 2.5 V
V
12
GS
2.5
= 2.5 V
V
3.0
12
GS
16
= 4.5 V
_
1.5 V
3.5
2 V
4.0
20
16
New Product
10,000
1,000
0.001
2000
1600
1200
0.01
800
400
100
0.1
20
16
12
10
8
4
0
0
1
0.0
0
0
C
rss
Gate Current vs. Gate-Source Voltage
T
0.5
J
= 150_C
V
V
4
DS
GS
3
V
Transfer Characteristics
GS
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
T
1.0
– Gate-to-Source Voltage (V)
J
= 25_C
Capacitance
C
8
oss
6
Vishay Siliconix
C
1.5
iss
T
C
25_C
= –55_C
12
Si7703EDN
9
2.0
www.vishay.com
16
12
2.5
125_C
3.0
20
15
3