NCP5351DR2G ON Semiconductor, NCP5351DR2G Datasheet - Page 12

• Manufacturer Part Number: NCP5351DR2G
• Description: IC DRIVER MOSFET DUAL 4A 8SOIC
• Manufacturer: ON Semiconductor
• Type: High Side/Low Sider

Specifications of NCP5351DR2G

• Configuration: High and Low Side, Synchronous
• Input Type: Inverting and Non-Inverting
• Delay Time: 45ns
• Current - Peak: 4A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 25V
• Voltage - Supply: 4.5 V ~ 6.3 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rise Time: 16 ns
• Fall Time: 21 ns
• Supply Voltage (min): - 0.3 V
• Supply Current: 1 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 30 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NCP5351DR2GOS; NCP5351DR2GOS; NCP5351DR2GOSTR

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Conditions: V
Room Temperature.
ORDERING INFORMATION
NCP5351D
NCP5351DG
NCP5351DR2
NCP5351DR2G
NCP5351MNR2
NCP5351MNR2G
Specifications Brochure, BRD8011/D.
Figure 16. Bottom Gate Fall Time
S
= 5.0 V; BST − DRN = 5.0 V; C
Device
+5.0 V
0 V
Pulse
60 ns
Input
Figure 18. Bottom Gate and Top Gate Rise/Fall Time Test
+5.0 V
TYPICAL PERFORMANCE CHARACTERISTICS
+
−
LOAD
= 5.7 nF;
EN
CO
PGND DRN
V
S
http://onsemi.com
BST
(Pb−Free)
(Pb−Free)
(Pb−Free)
BG
TG
Package
SOIC−8
SOIC−8
SOIC−8
SOIC−8
DFN10
DFN10
12
C3
5.7 nF
Conditions: V
Room Temperature.
Figure 17. Bottom Gate Rise Time
C4
5.7 nF
S
= 5.0 V; BST − DRN = 5.0 V; C
C1
100 nF
C2
100 nF
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
98 Units / Rail
98 Units / Rail
Shipping
†
LOAD
= 5.7 nF;