MGA-62563-TR1G Avago Technologies US Inc., MGA-62563-TR1G Datasheet - Page 2

• Manufacturer Part Number: MGA-62563-TR1G
• Description: IC AMP MMIC LNA 500MHZ SOT-363
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of MGA-62563-TR1G

• P1db: 18dBm
• Noise Figure: 0.8dB
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 47mA ~ 77mA
• Frequency: 100MHz ~ 3GHz
• Gain: 22dB
• Test Frequency: 500MHz
• Voltage - Supply: 3 V ~ 5 V
• Mounting Style: SMD/SMT
• Technology: Low Noise Amplifier
• Number Of Channels: 1
• Operating Frequency: 3000 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 77 mA @ 3 V
• Maximum Power Dissipation: 600 mW
• Package: 6SOT-363
• Number Of Channels Per Chip: 1
• Typical Output Power: 17.7@3000MHz dBm
• Typical Power Gain: 22@500MHz dB
• Maximum Operating Frequency Range: 3000 to 5000 MHz
• Typical Noise Figure: 1.5@3000MHz dB
• Typical Output Intercept Point: 31@3000MHz dBm
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 3.5GHz
• Operating Supply Voltage (typ): 3V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1.5@3000MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1828-2; MGA-62563-TR1G

MGA-62563 Absolute Maximum Ratings
Symbol
I
P
I
P
T
T
Figure 1. Test circuit of the 0.5 GHz production test board used for NF, Gain and
OIP3 measurements. This circuit achieves a trade-off between optimal NF, Gain,
OIP3 and input return loss. Circuit losses have been de-embedded from actual
measurements.
RF Output
Figure 1b. A diagram showing the connection to the DUT during an S and Noise
parameter measurement using an automated tuner system.
2
V
T
d
ref
CH
in
diss
STG
d
ch_b
Direct to
100 pF
Ground
Agilent 4142
Vdd supply from
Wire Supplying
Vbias from
Agilent 4142
Bias
Bias
Tee
Device Voltage (pin 6)
Device Current (pin 6)
CW RF Input Power (pin 3)
Bias Reference Current (pin 4)
Total Power Dissipation
Channel Temperature
Storage Temperature
Thermal Resistance
Parameter
6.8 nH
Reference
62x
Planes
+
[5]
3
3V
[2]
[2]
240
[4]
1 2 5
[1]
MGA-62563
[3]
4
Units
Blocking
V
mA
dBm
mA
mW
°C
°C
°C/W
6
Cap
47 nH
10 pF
68 pF
Direct to
Input
100 pF
Ground
RF
Absolute
Maximum
6
100
21
12
600
150
150
97
Notes:
1. Operation of this device above any one of
2. Bias is assumed at DC quiescent condi-
3. With the DC (typical bias) and RF applied to
4. Total dissipation power is referred to board
5. Thermal resistance measured using 150°C
these parameters may cause permanent
damage.
tions.
the device at board temperature T
(package belly) temperature T
P
T
Liquid Crystal Measurement method.
B
diss
> 85°C.
is required to derate at 10 mW/°C for
B
B
= 85°C,
= 25°C.