MGA-645T6-BLKG Avago Technologies US Inc., MGA-645T6-BLKG Datasheet - Page 3

• Manufacturer Part Number: MGA-645T6-BLKG
• Description: IC AMP LNA MMIC GAAS SMD 6-UTP
• Manufacturer: Avago Technologies US Inc.

Specifications of MGA-645T6-BLKG

• Rf Type: WiMAX / WiBro
• Gain: 15dB
• Current - Supply: 13mA
• Frequency: 1.5GHz ~ 3GHz
• Noise Figure: 1.1dB
• P1db: -5dBm
• Package / Case: 6-XFDFN Exposed Pad
• Test Frequency: 2.4GHz
• Voltage - Supply: 4V
• Frequency Rf: 3GHz
• Noise Figure Typ: 1.1dB
• Supply Current: 7mA
• Power Dissipation Pd: 80mW
• No. Of Pins: 6
• Frequency Range: 1.5GHz To 3GHz
• Manufacturer's Type: Low Noise Amplifier
• Number Of Channels: 1
• Frequency (max): 3GHz
• Operating Supply Voltage (max): 4V
• Package Type: UTSLP
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 1.1@2400MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-2128

Absolute Maximum Rating
Product Consistency Distribution Charts
Figure 1. Gain @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
LSL=13.5, Nominal=15.0, USL=16.5
Notes:
4. Distribution data sample size are 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
Electrical Specifications
T
specified.
Notes:
5. Measurements at 2.4GHz obtained using demo board described in Figure 1, with component values on Figure 2 (2.3 – 2.4 GHz)
6. 2.4GHz I
7. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

Symbol
Vdd
V
P
P
T
T
Symbol
Id
Gain
NF
IIP3
OP1dB
S11
S22
S12
|S21|2
IIP3
Id
A
diss
j
STG
bypass
in,max
= 25 °C, Vdd =3V, Vbypass = 1.8V, RF measurement at 2.4 GHz, measured on demo board (see Fig. 4) unless otherwise
BYPASS
nominal values anywhere between the upper and lower limits.
note for more details.
BYPASS
[6]
BYPASS
IP3
test condition: F
Parameter
Device Voltage
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
Parameter and Test Condition
Bias Current
Gain
Noise Figure (Typ.Vbypass=1.8V)
Input Third Order Intercept Point
Output Power at 1dB Gain Compression
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Bypass Mode Loss (Vbypass = 0)
Bypass Mode IIP3 (tested at -20dBm input Power)
Bypass Mode current
[5,7]
RF1
[1]
= 2.395 GHz, F
TA=25°C
[3]
[4]
RF2
Figure 2. NF @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
Nominal=1.1, USL=1.5
= 2.4 GHz with input power of -30dBm per tone.
Units
V
V
dBm
mW
°C
°C
Absolute Max.
4
(Vdd-0.3)
+15
80
150
-65 to 150
Units
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
uA
Min.
-
13.5
-
-
-
-
-
-
-
-
-
Thermal Resistance
(Vdd = 3.0V, Id=7mA), θjc = 60
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-
3. Board temperature T
Figure 3. Ids @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
Nominal=7.0, USL=13.0
these limits may cause permanent damage.
Red Measurement Technique.
°C derate the device power at 14mW per °C
rise in Board (package belly) temperature.
Typ.
7
15
1.1
+7
+9
-9
-15
-27
-4.5
16
80
Max.
13
16.5
-
-
-
-
-
-
-
1.5
-
[2,3]
B
is 25 °C , for T
°
C/W
B
>146