RF2312TR7

Manufacturer Part NumberRF2312TR7
DescriptionIC AMP HBT GAAS CATV 8-SOIC
ManufacturerRFMD
RF2312TR7 datasheet
 


Specifications of RF2312TR7

Current - Supply40mA ~ 120mAFrequency0Hz ~ 2.5GHz
Gain14.5dB ~ 15.1dBNoise Figure3.8dB ~ 4.3dB @ 300MHz ~ 1Ghz
P1db17dBm ~ 18.5dBmPackage / Case8-SOIC (0.154", 3.90mm Width)
Rf TypeISM, Broadcast TelevisionTest Frequency900MHz
Voltage - Supply5.5VLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names689-1007-2  
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RoHS Compliant & Pb-Free Product
Typical Applications
• CATV Distribution Amplifiers
• Cable Modems
• Broadband Gain Blocks
Product Description
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75Ω gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75Ω input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
InGaP/HBT
GaN HEMT
RF IN
1
GND
2
GND
3
GND
4
Functional Block Diagram
Rev C6 051025
LINEAR GENERAL PURPOSE AMPLIFIER
• Laser Diode Driver
• Return Channel Amplifier
• Base Stations
0.200
0.192
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
GaAs MESFET
Features
Si CMOS
SiGe Bi-CMOS
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 3.8dB Noise Figure
• +20dBm Output Power
8
RF OUT
• Single 5V to 12V Positive Power Supply
7
GND
6
GND
Ordering Information
5
GND
RF2312
RF2312 PCBA
RF2312 PCBA
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
RF2312
-A-
0.018
0.010
0.160
0.014
0.004
0.152
0.050
0.248
0.059
0.232
0.057
0.0100
0.0076
0.0500
0.0164
Package Style: SOIC-8
Linear General Purpose Amplifier
Fully Assembled Evaluation Board - 75Ω
Fully Assembled Evaluation Board - 50Ω
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
3-1

RF2312TR7 Summary of contents

  • Page 1

    ... Package Style: SOIC-8 Linear General Purpose Amplifier Fully Assembled Evaluation Board - 75Ω Fully Assembled Evaluation Board - 50Ω Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 3-1 ...

  • Page 2

    RF2312 Absolute Maximum Ratings Parameter Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Parameter Min. Overall (50Ω) Frequency Range Gain 14.5 Noise Figure Input VSWR Output VSWR Output IP 3 Output IP 3 Output IP 3 Output ...

  • Page 3

    Parameter Min. Overall (75Ω) Frequency Range Gain 14.5 Noise Figure Input VSWR Output VSWR Output IP 3 Output IP 3 Output IP 3 Output P 1dB Output P 1dB Output P 1dB Saturated Output Power Saturated Output Power Saturated Output ...

  • Page 4

    RF2312 Parameter Min. Overall (75Ω Push-Pull) Frequency Range Gain Noise Figure Input VSWR Output VSWR Output IP 2 Output IP 3 Second Harmonic 3-4 Specification Unit Typ. Max 150 MHz 15 dB 5.0 dB 1.1:1 1.2:1 +71 dBm ...

  • Page 5

    Pin Function Description input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in all applications. The device has internal feedback, and not using a DC- ...

  • Page 6

    RF2312 5MHz to 50MHz Reverse Path kΩ NOTE 1: Optional resistor R can be used to maintain the correct bias level at higher supply voltages. This is used to S increase output capability ...

  • Page 7

    F EDGE Rev C6 051025 Application Schematic Push-Pull Standard Voltage 120 Ω RF2312 RF2312 RF2312 P1 1 GND 2 3 ...

  • Page 8

    RF2312 2400 Ω 616PT- 1030 F EDGE 10 nF 2400 Ω 120 Ω 3-8 Application Schematic Push-Pull 24V 120 Ω 120 Ω 120 Ω RF2312 10 uH 120 Ω ...

  • Page 9

    ... Evaluation Board Schematic - 50Ω (Download Bill of Materials from www.rfmd.com.) P1 H3M P1-1 1 VCC ( GND 220 pF micro strip J1 SMA Evaluation Board Schematic - 75Ω P1-1 VCC 2 GND 3 NC CON3 micro strip F CONN (75 Ω) NOTE: For 5V applications may be removed (shorted). This will result in degraded distortion performance. ...

  • Page 10

    RF2312 Evaluation Board Layout - 50Ω 3-10 2.02” x 2.02” Board Thickness 0.031”, Board Material FR-4 Rev C6 051025 ...

  • Page 11

    Evaluation Board Layout - 75Ω Rev C6 051025 Standard Voltage 1.40” x 1.40” Board Thickness 0.062”, Board Material FR-4 RF2312 3-11 ...

  • Page 12

    RF2312 Evaluation Board Layout - 75Ω 3-12 Push-Pull, Standard Voltage 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 Rev C6 051025 ...

  • Page 13

    Evaluation Board Layout - 75Ω Rev C6 051025 Push-Pull, 24V 1.70” x 1.50” Board Thickness 0.062”, Board Material FR-4 RF2312 3-13 ...

  • Page 14

    RF2312 P versus P OUT 500 MHz 20.0 15.0 10.0 5.0 0.0 -15.0 -10.0 -5.0 P (dBm) IN Output Third Order Intercept Point (OIP3) versus P 500 MHz 50.0 40.0 30.0 20.0 10.0 0.0 -15.0 -10.0 -5.0 P (dBm) IN ...

  • Page 15

    CH1 4_: 53.809 -24.182 C2 4 START .300 000 MHz STOP 3 000.000 000 MHz CH1 4_: 19.802 -16.739 START .300 000 MHz STOP 3 000.000 000 ...

  • Page 16

    RF2312 75 Ohms, ICC = 100 mA, Temp = 25°C S[2,2] S[1,1] 3-16 75 Ohms, ICC = 110 mA, Temp = 25°C Swp Max 2.001GHz S[2,2] Swp Min 0.001GHz Swp Max 2.001GHz S[1,1] Swp Min 0.001GHz Rev C6 051025 ...