MGA-665P8-BLK Avago Technologies US Inc., MGA-665P8-BLK Datasheet - Page 2

• Manufacturer Part Number: MGA-665P8-BLK
• Description: IC AMP MMIC LNA GAAS 3V 8-LPCC
• Manufacturer: Avago Technologies US Inc.
• Type: General Purpose Amplifierr

Specifications of MGA-665P8-BLK

• P1db: 7.41dBm
• Noise Figure: 1.18dB
• Package / Case: 8-LPCC
• Current - Supply: 20.5mA
• Frequency: 500MHz ~ 6GHz
• Gain: 18.4dB
• Test Frequency: 2.4GHz
• Voltage - Supply: 2.7V ~ 3.3V
• Mounting Style: SMD/SMT
• Technology: Low Noise Amplifier
• Number Of Channels: 1
• Operating Frequency: 6000 MHz
• Operating Supply Voltage: 3 V
• Supply Current: 23.8 mA @ 3 V
• Maximum Power Dissipation: 270 mW
• Frequency Range: 0.5GHz To 6GHz
• Noise Figure Typ: 1.45dB
• Power Dissipation Pd: 270mW
• Supply Voltage Range: 3V
• Rf Ic Case Style: LPCC
• No. Of Pins: 8
• Rohs Compliant: Yes
• Manufacturer's Type: Low Noise Amplifier
• Frequency (max): 6GHz
• Operating Supply Voltage (typ): 3V
• Package Type: LPCC
• Mounting: Surface Mount
• Pin Count: 8
• Noise Figure (typ): 1.44@5800MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Rf Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 516-1951; MGA-665P8-BLK

Table 1. Absolute Maximum Ratings
Symbol
V
V
I
Pdiss
Pin max.
T
T
q
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. DC quiescent conditions.
3. Board (package belly) temperature T
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement
Product Consistency Distribution Charts at 5.25 GHz, 3.0 V, Id = 20.5 mA
Figure 1. NF; nominal = 1.45.
Figure 3. Gain (dB); nominal = 16 dB.
Notes:
5. Distribution data sample size is 500 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal val-
6. Measurements are made on production test board described in Figure 5, which represents a trade-off between optimal OIP3, P1dB, Gain and
2
D
CH
STG
D
C
ch_b
method.
ues anywhere between the upper and lower limits.
NF. Circuit losses have been de-embedded from actual measurements
160
120
180
150
120
80
40
90
60
30
0
0
1.2
15
Stdev = 0.067
Stdev = 0.20
–3 Std
1.3
Supply Voltage
Control Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
Parameter
1.4
GAIN (dB)
NF (dB)
16
1.5
+3 Std
[2]
[2]
[2]
1.6
+3 Std
[4]
[1]
B
1.7
is 25°C. Derate 29 mW/°C for T
17
[3]
Units
V
V
mA
W
dBm
°C
°C
°C/W
180
150
120
400
300
200
100
90
60
30
0
0
Figure 4. P1dB; LSL = 11, nominal = 11.4.
17
Figure 2. OIP3; LSL = 17.8, nominal = 18.2.
11
Stdev = 0.11
Stdev = 0.23
–3 Std
–3 Std
B
Absolute Maximum
6
6
45.6
0.27
13
150
-65 to 150
44.76
17.5
> 133°C.
P1dB (dBm)
OIP3 (dBm)
11.5
18
[5,6]
+3 Std
18.5
12
19