RF2370TR7 RFMD, RF2370TR7 Datasheet - Page 2

• Manufacturer Part Number: RF2370TR7
• Description: IC AMP 3V LOW-NOISE SOT23-6
• Manufacturer: RFMD

Specifications of RF2370TR7

• Current - Supply: 2.9mA ~ 3mA
• Frequency: 900MHz ~ 4GHz
• Gain: 17dB
• Noise Figure: 1.2dB
• Package / Case: SOT-23-6
• Rf Type: Cellular, WLAN, CDMA, PCS, MMDS
• Voltage - Supply: 1.8V ~ 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Test Frequency: -

RF2370
2 of 11
Absolute Maximum Ratings
Supply Voltage
Input RF Level
Current Drain, I
Operating Ambient Temperature
Storage Temperature
NOTE: Exceeding any one or a combination of the above maximum rating lim-
its may cause permanent damage. Input RF transients to +15dBm will not
harm the device. For sustained operation at inputs >+5dBm, a small dropping
resistor is recommended in series with the V
to self-biasing to <32mA.
Operating Range
Frequency Range
WiBRO/WLAN/WiMAX Low
Noise Amplifier
Frequency
HIGH GAIN MODE
Gain
Noise Figure
Input IP3
Output VSWR
Current Drain
BYPASS MODE
Gain
Input IP3
Output VSWR
Current Drain
WiMAX Low Noise Amplifier
Frequency
Gain
Noise Figure
Input IP3
BYPASS MODE (Low Gain)
Gain
Input IP3
GPS Low Noise Amplifier
Frequency
Gain
Noise Figure
Input IP3
Parameter
Parameter
CC
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+18.0
Min.
2300
3100
1500
12.0
900
-4.0
+14
+18
CC
+5 (see note)
-0.5 to +6.0
-40 to +150
-40 to +85
in order to limit the current due
Rating
Specification
32
+20.0
3500
1.7:1
1.6:1
1575
Typ.
14.0
-3.0
2.9
1.6
1.2
1.3
+8
11
+6
17
-4
7
Max.
4000
2700
3800
1600
Unit
dBm
V
-2.0
1.5
2:1
3.0
mA
°C
°C
DC
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Unit
dBm
dBm
dBm
dBm
dBm
dBm
MHz
MHz
MHz
MHz
mA
mA
dB
dB
dB
dB
dB
dB
dB
Caution! ESD sensitive device.
T
Gain Select<0.8V, V
IIP3 will improve if ICC is raised above 7mA.
Current Drain=I
Gain Select>1.8V, V
Note: Bypass mode insertion loss will degrade
gradually as V
Current Drain=I
Gain Select<0.8V, V
Gain Select>1.8V, V
Gain Select<0.8V, V
AMB
=+25°C, V
CC
CC
CC
CC
goes below 2.7V.
Condition
=3.0V
+I
+I
BIAS
BIAS
BIAS
BIAS
BIAS
REF
REF
=3V, T=+25°C
=0V
=3V
=0V
=3V
DS100827