MGA-43328-BLKG Avago Technologies US Inc., MGA-43328-BLKG Datasheet - Page 2

• Manufacturer Part Number: MGA-43328-BLKG
• Description: IC PWR AMP 2.5-2.7GHZ 28QFN
• Manufacturer: Avago Technologies US Inc.
• Type: High Linearity Amplifierr

Specifications of MGA-43328-BLKG

• P1db: 35.5dBm
• Noise Figure: 2.1dB
• Package / Case: 28-VFQFN Exposed Pad
• Current - Supply: 470mA
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 37.3dB
• Rf Type: 802.16 WiMAX
• Test Frequency: 2.6GHz
• Voltage - Supply: 5V
• Bandwidth: 2.5 GHz to 2.7 GHz
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Operating Supply Voltage: 5 V
• Supply Current: 470 mA
• Maximum Power Dissipation: 8 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Rating
Electrical Specifications
T
= 470mA, RF performance at 2.6 GHz, IEEE 802.16e 64-QAM, ¾ rate FEC, 10MHz bandwidth OFDMA operation unless
otherwise stated.
2
Symbol
Vdd, Vbias
Vc
P
P
T
T
Symbol
Vdd
Iqtotal
Gain
OP1dB
Pout_5V
Itotal_5V
S11
S22
S12
Atten
Vdet
DetR
NF
S
A
diss
j,MAX
STG
in,max
= 25°C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.0k:, R3 = 390:, R4 = 1.1k: as shown in Figure 36), Vbyp = 0V, Iqtotal
Parameter
Supply voltages, bias supply voltage
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
Parameter and Test Condition
Supply Voltage
Quiescent Supply Current (normal high gain mode)
Quiescent Supply Current (low gain mode, Vbyp = 5.0V)
Gain
Output Power at 1dB Gain Compression
Linear Output Power @ 2.5% EVM with 64-QAM OFDMA
modulation per IEEE 802.16e specs, 50% duty cycle, ¾ rate FEC
Total current draw at Pout_5V level
Input Return Loss, 50: source
Output Return Loss, 50: source
Reverse Isolation
Gain attenuation in low gain mode
Detector output DC voltage @ 29dBm linear Pout
Detector RF dynamic range
Noise figure
Stability under load VSWR of 6:1 (all phase angle), spurious output
[1]
T
A
=25°C
[3]
Units
V
V
dBm
W
°C
°C
Absolute Max.
6.0
(Vdd)
20
8.0
150
-65 to 150
Units
V
mA
mA
dB
dBm
dBm
mA
dB
dB
dB
dB
V
dB
dB
dBc
Thermal Resistance
Notes:
1. Operation of this device in excess of any of
2. Thermal resistance measured using Infra-Red
3. Board temperature (T
Thermal Resistance
T
JB
these limits may cause permanent damage.
Measurement Technique.
derate the device power at 85.5mW per °C
rise in board temperature adjacent to
package bottom.
= 11.7°C/W
Min.
35.0
27.7
21.5
[2]
Typ.
5.0
470
470
37.3
35.5
29.3
1017
-12
-11
60
24.5
2.6
10
2.1
B
) is 25°C, for T
Max.
1250
27.5
-60
B
>56.4°C