SI4734-C40-GM Silicon Laboratories Inc, SI4734-C40-GM Datasheet - Page 4

• Manufacturer Part Number: SI4734-C40-GM
• Description: IC RX AM/FM/SW/LW RADIO 20UQFN
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4734-C40-GM

• Frequency: 153kHz ~ 279kHz, 520kHz ~ 1.71MHz, 2.3MHz ~ 26.1MHz, 64MHz ~ 108MHz
• Modulation Or Protocol: AM, FM, SW-LW
• Applications: General Purpose
• Current - Receiving: 19.9mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Features: RSSI Equipped
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-UQFN, 20-µQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Sensitivity: -
• Memory Size: -
• Data Rate - Maximum: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Si4734/35-C40
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Note:
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at
2. SSOP devices operate down to V
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4734/35 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, GPO1, GPO2, and GPO3.
4. At RF input pins, FMI and AMI.
V
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
DD
= 3.3 V and 25 C unless otherwise stated.
3
3
Parameter
4
2
Parameter
DD
= 2 V at 25 °C.
1,2
Symbol
T
V
Symbol
V
V
T
V
V
I
STG
DDRISE
OP
IORISE
DD
IN
V
IO
IN
V
Rev. 1.0
T
1
DD
IO
A
Test Condition
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
IO
+ 0.3)
1.85
Min
–20
2.7
10
10
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
V
mA
C
C
V
V
V
PK
Unit
µs
µs
C
V
V