IXGN60N60C2D1 IXYS, IXGN60N60C2D1 Datasheet
IXGN60N60C2D1
Specifications of IXGN60N60C2D1
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IXGN60N60C2D1 Summary of contents
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... CES CE CES ±20 V GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGN 60N60C2 IXGN60N60C2D1 E E Maximum Ratings 600 = 1 MW 600 GE ±20 ±30 100 60 300 = 100 G CM ≤ 600 V CE 480 -55 ... +150 150 -55 ... +150 2500 3000 1.15/13 Nm/lb.in. ...
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... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 ms, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... V CE Fig. 3. Output Characteristics @ 125 Deg 0 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage 5 4.5 4 3 © 2004 IXYS All rights reserved 2.5 3 3.5 - Volts 2.5 3 3.5 - Volts º 00A C 50A 25A Volts IXGK 60N60C2 IXGX 60N60C2D1 Fig. 2. Extended Output Characteristics @ 25 deg. C 200 ...
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... I - Amperes C Fig. 11. Gate Charge 300V 50A 0mA nanoCoulombs G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 200 on I off C º º 0000 1 000 4,850,072 4,931,844 5,034,796 5,063,307 ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2004 IXYS All rights reserved 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 1000 0 100 ...