IXGN100N170 IXYS, IXGN100N170 Datasheet
IXGN100N170
Specifications of IXGN100N170
Related parts for IXGN100N170
IXGN100N170 Summary of contents
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... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGN100N170 Maximum Ratings 1700 = 1MΩ 1700 GE ±20 ±30 160 95 600 = 1Ω 200 G CM CES = 125° 735 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1 ...
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... CES 186 35 192 285 395 35 250 285 435 0.05 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGN100N170 SOT-227B miniBLOC (IXGN) Max 0.17 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 ...
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... T = 25ºC 160 J 140 120 100 4.0 IXGN100N170 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE I =200A 100A 50A C -25 ...
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... Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGN100N170 Fig. 8. Gate Charge V = 850V 100A 10mA 100 150 200 250 300 Q - NanoCoulombs G Fig. 10. Capacitance MHz ...
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... V = 15V GE = 850V 900 380 800 360 700 340 T = 125ºC J 320 600 300 500 280 400 300 260 100 IXGN100N170 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 1Ω 15V 850V 125º Amperes C Fig. 15. Resistive Turn-off Switching Times vs ...