IXGN100N170 IXYS, IXGN100N170 Datasheet - Page 3

• Manufacturer Part Number: IXGN100N170
• Description: IGBT 1700V 160A GENX3 SOT-227B
• Manufacturer: IXYS

Specifications of IXGN100N170

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 50µA
• Input Capacitance (cies) @ Vce: 9.22nF @ 25V
• Power - Max: 735W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 160
• Ic90, Tc=90°c, Igbt, (a): 95
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.17
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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200
180
160
140
120
100
200
180
160
140
120
100
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
80
60
40
20
80
60
40
20
0
0
0.0
0.0
5
50A
0.5
6
0.5
Fig. 5. Collector-to-Emitter Voltage
1.0
Fig. 1. Output Characteristics
7
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
1.0
100A
1.5
8
1.5
2.0
V
9
V
V
CE
CE
@ 125ºC
I
@ 25ºC
GE
C
- Volts
- Volts
= 200A
2.0
2.5
10
- Volts
3.0
V
11
2.5
GE
V
GE
= 15V
= 15V
3.5
13V
11V
12
13V
11V
3.0
T
J
4.0
= 25ºC
13
3.5
9V
7V
5V
4.5
14
9V
7V
5V
4.0
5.0
15
350
300
250
200
150
100
180
160
140
120
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
-50
4.0
0
V
GE
Fig. 2. Extended Output Characteristics
1
-25
4.5
= 15V
Fig. 4. Dependence of V
2
V
5.0
0
GE
Fig. 6. Input Admittance
Junction Temperature
3
= 15V
T
T
J
J
13V
11V
- Degrees Centigrade
= - 40ºC
5.5
25
125ºC
4
25ºC
V
V
@ 25ºC
CE
GE
IXGN100N170
- Volts
6.0
50
5
I
- Volts
9V
7V
5V
C
I
=200A
C
I
= 100A
6
C
6.5
75
= 50A
CE(sat)
7
100
7.0
8
on
125
7.5
9
150
8.0
10