IXBN75N170 IXYS, IXBN75N170 Datasheet - Page 4

• Manufacturer Part Number: IXBN75N170
• Description: IGBT BIMOSFET 1700V 145A SOT227B
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBN75N170

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 75A
• Current - Collector (ic) (max): 145A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 6.93nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 145
• Ic90, Tc=90°c, (a): -
• Vce(sat), Typ, Tj=25°c, (v): 3.1
• Tf Typ, Tj=25°c, (ns): 440
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.2
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Details

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
160
140
120
100
90
80
70
60
50
40
30
20
10
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
200
0
0
T
R
dV / dt < 10V / ns
V
I
I
C
G
20
J
CE
G
= 75A
= 10mA
40
= 125ºC
= 1Ω
400
= 850V
Fig. 11. Reverse-Bias Safe Operating Area
40
80
600
60
Fig. 7. Transconductance
120
80
Fig. 9. Gate Charge
800
Q
G
- NanoCoulombs
I
V
160
C
100
CE
- Amperes
1000
- Volts
120
200
1200
140
240
160
1400
280
180
1600
T
125ºC
25ºC
J
320
= - 40ºC
200
1800
220
360
100,000
10,000
1.000
0.100
0.010
0.001
1,000
300
250
200
150
100
100
0.0001
50
10
0
0.4
0
f
Fig. 12. Maximum Transient Thermal Impedance
= 1 MHz
0.6
5
0.001
0.8
Fig. 8. Forward Voltage Drop of
10
1.0
Fig. 10. Capacitance
Pulse Width - Seconds
15
0.01
Intrinsic Diode
1.2
V
V
CE
F
- Volts
1.4
20
- Volts
IXBN75N170
T
J
= 25ºC
0.1
1.6
25
1.8
30
2.0
C ies
C oes
C res
1
T
J
= 125ºC
35
2.2
2.4
10
40