MUBW35-12A7 IXYS, MUBW35-12A7 Datasheet

MUBW35-12A7

Manufacturer Part Number

MUBW35-12A7

Description

MODULE IGBT CBI E2

Manufacturer

IXYS

Datasheet

1.MUBW35-12A7.pdf (8 pages)

Specifications of MUBW35-12A7

Igbt Type

NPT

Configuration

Three Phase Inverter with Brake

Voltage - Collector Emitter Breakdown (max)

1200V

Vce(on) (max) @ Vge, Ic

3.1V @ 15V, 35A

Current - Collector (ic) (max)

50A

Current - Collector Cutoff (max)

1.1mA

Input Capacitance (cies) @ Vce

1.65nF @ 25V

Power - Max

225W

Input

Three Phase Bridge Rectifier

Ntc Thermistor

Yes

Mounting Type

Chassis Mount

Package / Case

Vrrm, Rect 1/3 Ph., (v)

1600

Idavm, Tc = 80°c, Rect 1/3 Ph., (a)

Rthjc, Typ, Rect 1/3 Ph., (k/w)

1.06

Vces, Inv 3 - Ph., (v)

1200

Ic25, Tc = 25°c, Inv 3 - Ph., (a)

Ic80, Tc = 80°c, Inv 3 - Ph., (a)

Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v)

2.6

Rthjc, Typ, Inv 3 - Ph., (k/w)

0.55

Vces, Br Chopper, (v)

1200

Ic80, Tc = 80°c, Br Chopper, (a)

Rthjc, Typ, Br Chopper, (k/w)

0.7

Package Style

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUBW35-12A7

Manufacturer:

IXYS

Quantity:

492

Company:

HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

MUBW35-12A7

Quantity:

Current page: 1 of 8
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Converter - Brake - Inverter Module

Three Phase

Rectifier

Symbol

IXYS reserves the right to change limits, test conditions and dimensions.

Input Rectifier Bridge D11 - D16

FAV

DAVM

FSM

DAVM

FSM

RRM

tot

D12

RRM

D11

thJC

= 1600V

= 44 A

= 400 A

D13

D14

Conditions

(per diode)

= 35 A; T

D15

D16

= 80°C; sine 180°

= 80°C; rectangular; d = 1/3

= 25°C

= V

= 100 V; I

= 25°C; t = 10 ms; sine 50 Hz

RRM

Brake Chopper

C25

CES

CE(sat)

; T

= 25°C

= 125°C

= 25°C

= 20 A; di/dt = -20 A/µs

= 1200 V

= 35 A

= 2.3 V

= 125°C

Three Phase

Inverter

C25

CES

CE(sat)

= 25°C, unless otherwise specified)

= 1200 V

= 50 A

= 2.6 V

NTC

min.

Characteristic Values

Maximum Ratings

typ.

1.4

2.0

1600

400

120

max.

1.06 K/W

1.7

0.2 mA

(CBI2)

µs

Application: AC motor drives with

●

Features

●

Input from single or three phase grid

Three phase synchronous or

asynchronous motor

electric braking operation

High level of integration - only one power

semiconductor module required for the

whole drive

Fast rectifier diodes for enhanced EMC

behaviour

NPT IGBT technology with low

saturation voltage, low switching

losses, high RBSOA and short circuit

ruggedness

Epitaxial free wheeling diodes with

Hiperfast and soft reverse recovery

Industry standard package with insulated

copper base plate and soldering pins for

PCB mounting

Temperature sense included

MUBW 35-12 A7

1 - 8

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MUBW35-12A7 Summary of contents

Page 1

... C Symbol Conditions 25° 125° 25° RRM T = 125° 100 di/dt = -20 A/µ (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved (CBI2 NTC 9 Three Phase Inverter V = 1200 V CES C25 ...

Page 2

Page 3

... 125° 25° RRM T = 125° /dt = -400 A/µ 600 thJC © 2004 IXYS All rights reserved Maximum Ratings 1200 ± 20 ± 125° ≤ CEK CES = 82 Ω 125° 180 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2.3 ...

Page 4

... Dimensions 0.0394" Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings °C -40...+125 °C 150 °C -40...+125 2500 V~ 2.7 - 3.3 Nm Characteristic Values min. typ. max. 5 mΩ 0.02 K/W 180 g MUBW 35-12 A7 © 2004 IXYS All rights reserved ...

Page 5

... Power dissipation versus direct output current and ambient temperature, sin 180° 1.2 K/W 1.0 Z thJC 0.8 0.6 0.4 0.2 0.0 0.001 0.01 Fig. 6 Transient thermal impedance junction to case © 2004 IXYS All rights reserved 200 50Hz, 80% V RRM A 160 45°C FSM VJ 120 125° ...

Page 6

... Fig. 10 Typ. forward characteristics of free wheeling diode 200 400 600 -di/dt Fig. 12 Typ. turn off characteristics of free wheeling diode © 2004 IXYS All rights reserved 11V 125° 200 160 120 80 = 125° 600V 30A MUBW3512A7 0 800 1000 A/µs ...

Page 7

... Fig. 18 Typ. transient thermal impedance 600 ns t d(off) t 400 = 600V CE = ±15V GE = 47Ω G 200 = 125° 1000 ns 800 t d(off) t 600 = 600V 400 CE = ±15V GE = 35A 200 = 125° Ω 80 100 diode IGBT MUBW3512A7 ...

Page 8

... Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC Ω 100 T Fig. 24 Typ. thermistorresistance versus temperature © 2004 IXYS All rights reserved T = 25° 1000 ns 750 t t d(off) 500 250 Ω 120 140 R G MUBW3512A7 125 150 °C ...

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