MUBW10-06A7 IXYS, MUBW10-06A7 Datasheet - Page 7

• Manufacturer Part Number: MUBW10-06A7
• Description: CONVERTER/BRAKE/INVERTER 1.9VCE
• Manufacturer: IXYS

Specifications of MUBW10-06A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.6nF @ 25V
• Power - Max: 85W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 18
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.47
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 20
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 15
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.5
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.5
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUBW1006A7

© 2002 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
E
E
I
CM
on
on
0.75
0.50
0.25
0.00
1.5
1.0
0.5
0.0
mJ
mJ
25
20
15
10
A
5
0
0
0
0
V
V
I
T
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
V
V
R
T
C
VJ
R
T
CE
GE
CE
GE
VJ
G
VJ
G
= 10A
= 300V
= ±15V
= 125°C
100
= 82
= 300V
= ±15V
= 82
= 125°C
= 125°C
20
times versus collector current
times versus gate resistor
RBSOA
200
40
t
d(on)
10
t
r
300
60
E
t
d(on)
on
t
r
400
80
R
I
G
100
C
500
E
20
V
on
120
600
CE
A
140
700
60
40
20
0
45
30
15
0
ns
ns
V
t
t
7 - 8
Z
E
E
0.0001
thJC
off
off
0.001
1.00
0.75
0.50
0.25
0.00
0.01
K/W
0.6
0.4
0.2
0.0
0.1
mJ
mJ
0.00001 0.0001 0.001
10
1
0
0
V
V
I
T
Fig. 14 Typ. turn off energy and switching
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
C
CE
GE
VJ
= 10A
= 300V
= ±15V
= 125°C
20
single pulse
times versus collector current
times versus gate resistor
t
d(off)
40
10
60
E
0.01
off
MUBW 10-06 A7
80
R
0.1
G
100
I
C
t
V
V
R
T
20
VJ
CE
GE
G
120
= 300V
= 82
t
1
= ±15V
= 125°C
f
MUBW1006A7
E
t
t
d(off)
diode
IGBT
f
off
s
A
140
10
400
300
200
100
0
300
200
100
0
ns
ns
t
t
B4