MUBW50-06A8 IXYS, MUBW50-06A8 Datasheet - Page 8

• Manufacturer Part Number: MUBW50-06A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-06A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 2.8nF @ 25V
• Power - Max: 250W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 120
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 75
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.50
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 1.00
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

E
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Brake Chopper T7 / D7
Z
I
0.0001
off
C
thJC
0.001
0.01
K/W
0.1
60
50
40
30
20
10
mJ
10
A
0.001
0
2
1
0
1
0
0
Fig. 19 Typ. output characteristics
Fig. 21 Typ. turn off energy and switching
Fig. 23 Typ. transient thermal impedance
V
GE
E
V
V
R
T
off
VJ
= 15 V
CE
GE
G
= 82 Ω
= 600 V
= ±15 V
= 125°C
10
1
single pulse
times versus collector current
0.01
t
d(off)
20
2
T
VJ
0.1
= 25°C
30
3
V
CE
I
C
t
1
T
40
VJ
4
= 125°C
t
f
V
A
diode
IGBT
s
50
5
10
400
200
0
ns
t
R
E
10000
off
I
1000
F
1.00
0.75
0.50
100
Ω
mJ
20
15
10
A
5
0
Fig. 20 Typ. forward characteristics
Fig. 22 Typ. turn off energy and switching
0
Fig. 24 Typ. thermistorresistance
0
0
Temperature Sensor NTC
V
V
I
T
C
VJ
CE
GE
E
= 600 V
= ±15 V
off
= 20 A
= 125°C
20
25
of free wheeling diode
times versus gate resistor
versus temperature
T
VJ
= 125°C
40
50
1
MUBW 50-06 A8
60
75
T
VJ
V
100
80
2
F
= 25°C
T
R
100
125
G
V
t
d(off)
t
f
C
Ω
120
150
20070921a
3
1000
ns
750
500
250
0
8 - 8
t