MUBW50-17T8 IXYS, MUBW50-17T8 Datasheet - Page 5

• Manufacturer Part Number: MUBW50-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 74A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 290W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 130
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.10
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 74
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 53
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.43
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
P
[W]
Input Rectifier Bridge D11 - D16
[K/W]
[A]
Z
I
tot
F
thJC
100
350
300
250
200
150
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
0
0.0
0
1
Fig. 1 Typ. forward current vs.
Fig. 4 Power dissipation versus direct output current
Fig. 6 Transient thermal impedance junction to case
20
T
T
0.5
VJ
VJ
voltage drop per diode
& ambient temperature, sin 180°
= 125°C
= 25°C
40
V
F
I
d(AV)M
1.0
[V]
60
10
[A]
80
1.5
100
2.0
120
I
t [ms]
FSM
[A]
100
140
0
500
400
300
200
100
0
0.01
20
Fig. 2 Surge overload current
50Hz, 80% V
40
60
I
amb
1000
80 100 120 140 160
[°C]
RRM
t [s]
0.1
T
T
VJ
VJ
= 150°C
= 45°C
R
5.0 K/W
2.5 K/W
1.5 K/W
1.0 K/W
0.75 K/W
0.5 K/W
thA
:
10000
1
I
[A
d(AV)
[A]
I
2
2
t
s]
140
120
100
10
10
10
80
60
40
20
0
4
3
2
1
0
Fig. 3 I
Fig. 5 Max. forward current vs.
T
VJ
T
20 40 60 80 100 120 140 160
MUBW 50-17 T8
P
= 150°C
J
T
V
VJ
1
2
3
4
5
case temperature
= 45°C
2
2
t versus time per diode
0.06
0.024
0.586
0.114
0.317
R
C
t [ms]
T
3
i
th1
C
R
[°C]
4 5 6 7 8 9
th1
0.0085
0.001
0.045
0.85
0.35
C
t
i
th2
R
20090826a
th2
10
5 - 8
T
C