MIO600-65E11 IXYS, MIO600-65E11 Datasheet - Page 3

• Manufacturer Part Number: MIO600-65E11
• Description: IGBT MODULE SGL 600A E11
• Manufacturer: IXYS

Specifications of MIO600-65E11

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 6500V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 150nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E11
• Vces, (v): 6500
• Ic25, Tc = 25°c, Igbt, (a): 840
• Ic80, Tc = 80°c, Igbt, (a): 600
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 4.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 3250
• Rthjc, Max, Igbt, (k/w): 0.011
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 600
• Rthjc, Max, Diode, (k/w): 0.021
• Package Style: E11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

© 2011 IXYS All rights reserved
1200
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5
0
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Fig. 5 Typical gate charge characteristics
0
0
0
0
0
Fig. 1 Typical output characteristics, chip level
Fig. 3
1
1
1
9V
2
Typical on-state characteristics, chip level
2
2
3
17V
15V
13V
11V
3
3
Q
4
V
g
V
V
CE
25 °C
CE
CC
4
[µC]
4
[V]
[V]
= 3600 V
5
5
5
6
V
6
CC
6
7
125 °C
I
T
T
V
C
= 4400 V
vj
vj
GE
= 600 A
= 25 °C
= 25 °C
7
= 15V
7
8
8
8
9
1000
100
1200
1000
1200
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10
800
600
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200
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600
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200
1
Fig. 6 Typical capacitances vs collector-emitter
0
0
0
Fig. 2 Typical output characteristics, chip level
Fig. 4
0
0
V
CE
1
1
5
= 20 V
voltage
2
2
3
Typical transfer characteristics, chip level
10
9V
C
C
C
3
4
ies
oes
res
17V
15V
13V
11V
5
4
15
V
V
V
CE
6
CE
GE
5
[V]
[V]
[V]
7
20
125 °C
6
8
9 10 11 12 13
MIO 600-65E11
7
25
V
f
V
T
OSC
GE
OSC
vj
= 125 °C
8
= 0V
= 1 MHz
= 50 mV
30
25 °C
9
10
35
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