MKI100-12E8 IXYS, MKI100-12E8 Datasheet - Page 4

• Manufacturer Part Number: MKI100-12E8
• Description: MOD IGBT H-BRIDGE 1200V 165A E3
• Manufacturer: IXYS

Specifications of MKI100-12E8

• Configuration: Full Bridge Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 165A
• Current - Collector Cutoff (max): 1.4mA
• Input Capacitance (cies) @ Vce: 7.4nF @ 25V
• Power - Max: 640W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 165
• Ic80, Tc = 80°c, Igbt, (a): 115
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.0
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (k/w): 0.19
• If25, Tc = 25°c, Diode, (a): 200
• If80, Tc = 80°c, Diode, (a): 130
• Rthjc, Max, Diode, (k/w): 0.30
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
250
200
150
100
16
mJ
12
50
mJ
40
30
20
10
A
8
4
0
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
R
T
E on
E on
VJ
G
= 12 Ω
200
= 125°C
times versus collector current
times versus gate resistor
RBSOA
V
V
R
T
50
5
VJ
CE
GE
G
400
= 600 V
= 12 Ω
= ±15 V
= 125°C
V
V
I
T
600
C
CE
GE
VJ
= 600 V
= ±15 V
= 100 A
= 125°C
10
100
800 1000 1200 1400
R
I
G
C
150
15
V
CE
Ω
A
t d(on)
t d(on)
t r
200
20
t r
400
300
200
100
0
ns
400
300
200
100
0
ns
V
t
t
E
E
Z
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
mJ
20
16
12
16
12
0.0001
8
4
0
8
4
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
E off
E off
V
V
R
T
CE
GE
VJ
G
= 12 Ω
= 600 V
= ±15 V
= 125°C
0.001
times versus collector current
V
V
I
T
times versus gate resistor
C
50
VJ
CE
GE
single pulse
5
= 600 V
= ±15 V
= 100 A
= 125°C
0.01
100
10
0.1
MWI 100-12 E8
MKI 100-12 E8
R
G
I
C
150
t
15
1
A
MWI100-12E8
diode
IGBT
t d(off)
t d(off)
Ω
s
t f
t f
200
20
10
20070912a
1000
800
600
400
200
0
1000
750
500
250
0
ns
ns
4 - 4
t
t