MKI75-12E8 IXYS, MKI75-12E8 Datasheet - Page 3

• Manufacturer Part Number: MKI75-12E8
• Description: MOD IGBT H-BRIDGE 1200V 130A E3
• Manufacturer: IXYS

Specifications of MKI75-12E8

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 75A
• Current - Collector (ic) (max): 130A
• Current - Collector Cutoff (max): 1.1mA
• Input Capacitance (cies) @ Vce: 5.7nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 130
• Ic80, Tc = 80°c, Igbt, (a): 90
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.0
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 7.5
• Rthjc, Max, Igbt, (k/w): 0.25
• If25, Tc = 25°c, Diode, (a): 150
• If80, Tc = 80°c, Diode, (a): 100
• Rthjc, Max, Diode, (k/w): 0.41
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
I
V
I
C
C
GE
250
200
150
100
50
15
12
200
160
120
A
V
0
9
6
3
0
80
40
A
0
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
5
V
I
C
CE
T
VJ
100
V
= 600 V
= 100 A
= 25°C
CE
1
= 20 V
6
200
2
7
T
300
V
VJ
GE
= 125°C
= 17 V
3
V
8
V
400
CE
GE
T
VJ
Q
= 25°C
G
4
500
9
15 V
V
13 V
nC
11 V
9 V
V
600
5
10
I
I
C
RM
I
F
250
200
150
100
250
200
150
100
120
50
50
A
A
80
40
A
0
0
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics
Fig. 6 Typ. turn off characteristics
I
T
RM
T
V
I
VJ
F
VJ
R
= 100 A
= 125°C
= 600 V
= 125°C
200
1
of free wheeling diode
of free wheeling diode
1
T
VJ
400
= 125°C
2
T
VJ
2
600
3
V
= 25°C
GE
V
-di/dt
MWI 75-12 E8
MKI 75-12 E8
V
F
= 17 V
CE
800
4
A/μs
3
11 V
MWI75-12E8
13 V
15 V
V
9 V
V
1000
t
rr
5
20070912a
300
200
100
0
ns
3 - 4
t
rr