IXFN24N100 IXYS, IXFN24N100 Datasheet - Page 4

MOSFET N-CH 1KV 24A SOT-227B

IXFN24N100

Manufacturer Part Number
IXFN24N100
Description
MOSFET N-CH 1KV 24A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFN24N100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
390 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 8mA
Gate Charge (qg) @ Vgs
267nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
568W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.39 Ohms
Forward Transconductance Gfs (max / Min)
22 s
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
595 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.39
Ciss, Typ, (pf)
8700
Qg, Typ, (nc)
267
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
568
Rthjc, Max, (ºc/w)
0.22
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN24N100
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXFN24N100
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
IXFN24N100
Quantity:
102
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
45
40
35
30
25
20
15
10
100
5
0
70
60
50
40
30
20
10
0
3.5
0.3
0
f
0.4
= 1MHz
4.0
5
Fig. 9. Forward Voltage Drop of
0.5
10
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
Intrinsic Diode
15
V
V
V
GS
T
5.0
SD
DS
J
0.7
= 125ºC
- Volts
- Volts
- Volts
C rss
T
20
J
= 125ºC
C oss
0.8
5.5
- 40ºC
25ºC
25
C iss
0.9
6.0
30
T
1.0
J
= 25ºC
6.5
35
1.1
7.0
1.2
40
1.000
0.100
0.010
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0.001
0
0
V
I
I
D
G
DS
5
30
= 12A
= 10mA
Fig. 12. Maximum Transient Thermal
= 500V
10
60
0.01
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
90
G
I
- NanoCoulombs
D
20
Impedance
- Amperes
120
0.1
25
IXFN24N100
150
30
125ºC
T
180
J
= - 40ºC
25ºC
35
IXYS REF: F_24N100(9X)10-17-08-C
1
210
40
240
45
270
50
10

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