IXFN200N10P IXYS, IXFN200N10P Datasheet
IXFN200N10P
Specifications of IXFN200N10P
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IXFN200N10P Summary of contents
Page 1
... DSS DS DSS 0.5 I DS(on D25 400A GS D Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFN 200N10P Maximum Ratings 100 = 1 MΩ 100 GS ±20 ±30 200 100 400 JM 60 100 4 ≤ DSS 680 -55 ... +175 175 -55 ...
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... dI/dt = 100 A/μ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. , pulse test 60 97 7600 ...
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... D S Fig Nor m alize DS(on) V alue vs . Drain Curr e nt 2.4 2.2 2 1.8 1 10V GS 1 15V - - - - GS 1.2 1 0.8 0 100 150 200 mperes D © 2006 IXYS All rights reserved C 350 300 250 8V 200 150 7V 100 1.2 1.4 1.6 C 2.4 2 1.8 1.6 7V 1 ...
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... Source -To-Drain V oltage 350 300 250 200 150 100 º 150 0.4 0.6 0 olts S D Fig. 11. Capacitance 100,000 f = 1MH z 10,000 1,000 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 7 º 1.2 1.4 1 ...
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... Fig. 13. Maximum Transient Thermal Resistance 1.000 0.100 0.010 0.001 0.00001 0.0001 © 2006 IXYS All rights reserved 0.001 0.01 Pulse Width - Seconds IXFN 200N10P 0 IXYS REF: T_200N10P (88) 03-22-06-E.xls ...