IXTN90P20P IXYS, IXTN90P20P Datasheet - Page 5

• Manufacturer Part Number: IXTN90P20P
• Description: MOSFET P-CH 200V 90A SOT227
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTN90P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 205nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): -200.0
• Id(cont), Tc=25°c, (a): -90.0
• Rds(on), Max, Tj=25°c, (?): 0.044
• Ciss, Typ, (pf): 12000
• Qg, Typ, (nc): 205
• Trr, Typ, (ns): 315
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: SOT-227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTN90P20P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90P20P(B9)03-25-09-D